This paper systematically introduces topology mathematic model and CAD program for designing low-noise broadband microwave transistor amplifiers in accordance with the predicted requirements & maximum flat gain optimum noise and minimum M.

本文系统叙述了按最大平坦 增益、最佳噪声及最小M的设计要求，设计低噪声宽频带微波 晶体管放大器的拓扑结构、数学模型及计算机辅助设计程序。

Darlington transistor is more convenience in power amplification areas because of its high power gain and high reliability .

达林顿 晶体管 增益大、可靠性高，尤其在大功率应用中更加简便。

Then DC characteristics of the transistor are described by using a mathematical model the calculated current gain is obtained and an optimal design scheme of a Bi-CMOS npa bipolar transistor fully-compatible with CMOS process is presented .

然后，建立了分析计算 晶体管直流特性的数学模型，并分析计算了工艺参数、器件结构对器件性能的影响，给出了CMOS工艺全兼容的 Bi-CMOS双极型npn晶体管的最佳设计方案。

Transistor matched power gain

晶体管匹配功率 增益

Measurement on microwave transistor output power and gain

微波 功率 晶体管输出功率和 增益测试

Based on the theoretical model a new type of the transistor with low temperature coefficient of the current gain has been manufactured successfully .

据此理论模型研制成功了电流 增益温度特性优良的 中小 功率 晶体管系列。

Using the internal relations among the transistor small signal parameter models such as H 、π and Y We may sum up the general express form and characteristic of the common emitter amplifier gain under different parameter models .

利用 晶体管不同参数模型间的内在联系，归纳出在模型参数下的共射放大电路 增益的一般表达形式及其特点。

The transistor produces 70 Watts of output power with 8.5 dB of gain and 50 % collector efficiency at 2 GHz and for short pulse operation .

在2GHz短脉冲工作条件下，该 晶体管输出功率70W， 增益8.5dB，集电极效率50%。

As the CMOS technology keeps scaling down more and more design difficulties are raised for precise or highly linear analog / RF circuits mostly due to the decreasing transistor intrinsic gain and the shrinking voltage headroom .

随着CMOS工艺中器件尺寸的不断缩小，精确的或者说高线性的模拟／射频电路面临着越来越多的设计困难，这主要是由 晶体管本征 增益的降低和可用电压空间的减小导致的。

Meanwhile polysilicon transistor has positive temperature coefficient of current gain . The transistor has the same temperature property with bulk silicon with a smaller change of current gain when temperature is varying . 2 .

多晶硅 三极 管的电流 增益具有正温度系数，大电流下的电流增益随温度的变化比小电流情况小，该三极管具有和体硅相同的温度特性。

By means of adding two transistors in each column bus making them form a short-circuit differential amplifier with source follower transistor and row switch transistor inside of pixel the photoelectric conversion gain is increased by this method .

通过在每列总线上增加两个晶体管，使之与像素内的行选通 晶体管和源跟随晶体管形成一个输入输出短接的差动放大器，提高了像素内的光电转换 增益。

It is shown that the new transistor has more uniform characteristics of current gain at low current level and an excellent low-frequency noise figure so that it is a promising low noise device at low frequency with simpler processes .

实验结果表明， 漂洗 发射 极 晶体管的小电流 增益均匀性好，具有良好的低频噪声特性，是一种工艺比较简化，性能较好的低频低噪声器件。

This amplifier utilizes negative feedback structure and a two stage cascade selects a novel microwave transistor thus it can ensure the bandwidth the enough power gain and the satisfying flatness .

该放大器为了实现从DC到2.6GHz的带宽，保证有足够的 增益和理想的 增益平坦度，采用了负反馈结构，两级级联，并选用了一种结构新颖的微波 晶体管。