A single-electron transistor ( SET ) can be used as a sensitive electrometer whose sensitivity is limi-ted by noise . Shot noise is the intrinsic noise which determines the limit of sensitivity of the SET .

单电子 晶体管（SET）作为灵敏静电计的灵敏度受到 噪声的限制，其中散粒噪声（shotnoise）是本征噪声，决定着单电子晶体管灵敏度的极限。

Study on Fractal Characteristic of Transistor Noise at Low Frequency

晶体管低频 噪声的分形特性研究

The prior various crossing adopt electric bells or ordinary transistor audible devices and have the problems of difficult volume adjustment large noise disturbance etc.

目前各类道口采用的电铃及一般 晶体管音响装置，存在着音量不易调整， 噪音干扰大等问题。

With high power MOSFET transistor balanced amplification structure and optimum design on computer simulation software the paper provides a full-band amplifier in 1.5 ~ 30 MHz with low noise and high dynamic characteristics .

利用大功率的MOSFET 晶体管，采用平衡放大结构，并通过计算机仿真软件优化设计，实现了一个1.5~30MHz全频段的低 噪声、大动态的短波放大器。

It is shown that the new transistor has more uniform characteristics of current gain at low current level and an excellent low-frequency noise figure so that it is a promising low noise device at low frequency with simpler processes .

实验结果表明， 漂洗 发射 极 晶体管的小电流增益均匀性好，具有良好的低频 噪声 特性，是一种工艺比较简化，性能较好的低频低噪声器件。

This paper examines whether the stochastic resonance process will occur in the non linear second order circuits . A unijunction transistor second circuit used as an experiment circuit was forced by a bath with a specified signal period and noise .

为考察二阶非线性电路响应中是否存在随机共振过程，用噪声信号和周期信号同时激励二阶非线性单结 管电路，并观察其响应和测量输出响应信号的 信 噪 比。

By the rule of ignorable feed-back within a mixer transistor a new kind of algorithm of a mixer noise coefficient is suggested .

依据管子内部反馈作用可以不考虑的 特点，提出了混频器 噪声系数的新算法。

Study on the Relation between Complex Correlation Coefficient Transistor Noise Model and its Internal Noise Sources

晶体管 噪声模型复相关系数与其内部噪声源的关系

This paper systematically introduces topology mathematic model and CAD program for designing low-noise broadband microwave transistor amplifiers in accordance with the predicted requirements & maximum flat gain optimum noise and minimum M.

本文系统叙述了按最大平坦增益、最佳 噪声及最小M的设计要求，设计低噪声宽频带微波 晶体管放大器的拓扑结构、数学模型及计算机辅助设计程序。

This paper mainly introduces the circuit design 、 circuit simulation 、 layout design 、 circuit test and debug of X band GaAs HEMT transistor low noise amplifier .

本论文主要介绍的是 基于GaAs HEMT的X波段的低 噪声放大器的电路设计、电路仿真、版图设计以及电路的测试、调试。

Evaluating the noise performances of three configurations of transistor amplifier accurately is the crux of optimization design of circuit configurations for low & noise amplifier . New results about En-In noise analysis of three configurations of transistor are presented in this paper .

准确评价 晶体管三种组态的噪声性能是低 噪声放大器电路组态优化设计的关键.本文在晶体管三种组态En&In人噪声分析等方面给出了若干新结果。

The second one optimized for RF transistor using the same architecture oscillated at 2.61 GHz with a phase noise of - 95.8 dBc / Hz at 500 kHz offset .

第2个振荡器使用相同的电路结构，采用射频 晶体管设计，振荡频率为2.61GHz，相位 噪声为-95.8dBc/Hz@500kHz。

The design methods of lossless snubber circuit to reduce the main switching transistor and freewheeling diode interference and the compensation inductor circuit to the common mode noise interference are given .

给出了减小传导干扰的无损耗缓冲电路、 抑制 共模干扰的补偿电感设计方法。

Consequently T-shaped struc-ture which have a large cross-sectional area but a short footprint has been applied for the fabri-cation of PHEMT device because it is effective in reducing transistor noise due to gate parasitic resistance .

为了解决这个问题，一种具有大截面面积而底部长度却很小的T形栅结构通常被用于制作PHEMT器件，因为这种结构可以有效地减少由于栅寄生电阻而引起的 晶体管 噪声。

Through the low-noise amplifier designed the spectrum and time figure of the transistor noise at low frequency ( 100mHz ~ 1.65Hz ) was measured besides that the scale invariant range and fractal dimension are calculated with several methods .

利用设计的低噪声放大器，测量出 晶体管低频段（100mHz&1.65Hz） 噪声的功率谱及时间波形，找出了其无标度区间，并用多种方法计算了分形维。

The high electronic mobility transistor is a Field Effect Transistor which has a series of merits such as high-frequency low noise high efficiency and so on .

高电子迁移率晶体管是一种新型的场效应 晶体管，具有高频率、低 噪声、大功率等一系列的优点。

The analysis of noise characteristics of active mixers in the literature is commonly based on the available transistor noise models published in the literature for individual un-coupled noise sources .

文献中对于有源 混频器 噪声特性的分析通常是基于已发表的独立非耦合的噪声源模型。

The low phase noise potential of K-band VCO using NPN silicon-Germanium transistor with low noise floor high cut-off frequency ( 70GHz ) and high collector current capacity has been studied in detail .

因此在设计中，选用了具有低 噪声基底、高截止频率（70GHz）、高集电极电流容量的锗化硅材料的NPN 晶体管，有利于提高系统的噪声性能。

The experiment showed that surface leak current can be controlled transistor electronic noise can be lowered and the reliability stability and life can be enhanced by adopting surface passivation ( technique ) .

实验表明，采用合适的表面钝化技术，可有效控制 晶体管的表面漏电流，降低 晶体管的电 噪声，使 器件的可靠性、稳定性及其使用寿命得到提高。

Research to Distinguish Transistor g-r Noise with Higher Order Cumulant

利用高阶累积量判断 晶体管的g-r 噪声

Due to the proper operating point of a mixer transistor namely the intermediat-frequency output selecting circuit may be seen as a short circuit over input carrier-frequency with its adjacents in this paper the influence of input noise source to the output are calculated and analyzed .

根据混频 三极 管特殊的工作状态，即输出中频选频网络对输入载频及其附近的信号相当于短路，计算分析了输入回路的 噪声源对输出的影响。

For the composition of the optocouplers with transistor output the noise theory radiation mechanism and radiation effect are expounded establishing an irradiation noise test system .

针对 晶体管输出型光电耦合器的结构组成，详细阐述了其 噪声理论、辐照机理和辐照效应，建立了光电耦合器的辐照噪声测试系统。

With the whole new method simple calculation instead of the traditional measures which used to design low noise single-stage negative feedback amplifier the relations among the transistor data feedback effect noise factor as well as singal resistance are studied .

本文一改过去负反馈低噪声放大器的设计步骤，采用全新的方法&方框图法，确定了负反馈电路中 晶体管参数，反馈深度、 噪声系数、信号源内阻和工作频率之间的关系。

Analysis and Design of Silicon Bipolar Transistor 's with Low Noise at Low Frequency under Low Temperatures

硅低温低频低 噪声双极 晶体管的分析与设计