Electroless Ni Plating for Thin Film Memory Disks

薄膜硬 磁盘化学镀镍

A novel micropump actuated by thin film shape memory alloy has been developed .

一种用形状 记忆合金 薄膜驱动的新型微泵已经研制成功。

The failure mechanism and device mechanics of ferroelectric thin film field-effect transistor memory

铁电 薄膜场效应晶体管 存储器件的失效机制及器件力学

At present the materials used to prepare ferroelectric thin film memory are mainly PZT series because they have some favorable properties such as large remnant polarization ( Pr ) value and low processing temperature .

锆钛酸铅（PZT）系铁电材料具有一系列良好的性能，如较大的剩余极化值、较低的热处理温度等，是目前 铁电 存储器所用的主要材料。

Thin Film Polymer Memory

薄膜聚合物 存储器

These results suggest that the sandwich structure BLT / PZT / BLT thin film is a promising material combination for ferroelectric memory applications .

这些结果表明，三明治结构的BLT/PZT/BLT 薄膜是一种非常适合应用于铁电 存储器的铁电 薄膜。

Research of Preparation and Properties of Lower-electrode ( Pt / Ti ) of Ferroelectric Thin Film Memory

铁电 薄膜 存储器底电极Pt/Ti的制备及性能研究

Integration of ferroelectric thin film and semiconductor creates a new generation of non volatile memories . The ferroelectric non volatile memories have some advantages over the classical semiconductor memorizers and they are the ideal memory chip for IC card .

铁电 薄膜与半导体集成产生了新一代非易失存储器，与传统的半导体非易失存储器比较具有突出的优点，是新一代IC卡的理想 存储芯片。