The transistor can be regarded as two back-to-back Schottky barrier diodes .

根据其 结构 特点， 我们可以将其看作是两个背靠背的 肖特基二极管。

A simulation study of metal-oxide-semiconductor field-effect transistor with Silicon-based Schottky Barrier contacts for source and drain ( SBSD-MOSFET ) is presented in this paper .

本文对硅基 肖特基源漏MOSFET（简称 SBSD-MOSFET）进行模拟研究。

A Schottky gate resonant tunneling transistor ( RTT ) is fabricated . The gate is formed by electroplating Pt / Au onto the side of an double barrier structure .

已研制成了肖特基栅共振隧穿 晶体管，在双 势垒结构上蒸发铂金形成栅。