Single-electron transistor has received extensive attention and intensive research in re-cent years by virtue of its advantages such as ultra-small geometry ultra-low power dissipation ultra-low operating voltage and ultra-high operating frequency based on the Coulomb bloc-kade and quantum size effect .

基于库仑阻塞效应和量子尺寸效应工作的单电子 晶体管（SET）由于具有超小器件尺寸、超低 功耗、超低工作电流和超高工作频率等特点，受到人们的重视和深入研究。

It has two main source of power dissipation for CMOS integrated circuits : the dynamic power dissipation which is caused by the change of CMOS transistor working state and the static power dissipation which is caused by the leaking current .

CMOS集成电路功耗的物理来源主要有两种：由于CMOS 管工作状态变化而引起的动态功耗和由于漏电流而产生的静态 功耗。

The field transistor is arranged with the heat dissipation block in parallel and is fixed on the heat dissipation block via a screw with simple installment .

场 效应 管 与 散热块平行设置，用一压条将场 效应 管用螺钉固定压在散热块上，安装方便。

Calculation of transistor dissipation in switching power supplies and analysis of DC - DC Converters

开关电源 管 耗计算及DC&DC电路分析