The application scope of non-fully depletion SOI / MOS transistor is restricted due to Kink effect .

非全耗尽SOI/MOS 晶体管由于存在Kink 效应而限制了它的应用范围。

Thin film transistor ( TFT ) is a kind of field effect device and it is composed of electrode layer semiconductor layer and insulator layer .

薄膜 晶体管（ThinFilmTransistor，TFT）是由电极层、半导体层和绝缘层组成的场 效应器件。

We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer .

本文从包括埋层 影响的集区杂质分布出发，求出了寄生PNP 晶体管的共基极电流放大系数。

As designing technique of the digital system and manufacturing process of integrated circuit are improving the kinds of faults caused by transistor defect have became a main effect to digital circuit which bring a strong challenge to the traditional testing methods .

随着数字系统设计技术的发展和电路集成度的提高，由 晶体管缺陷导致的各种故障对电路的 影响也越来越大，这给传统的测试技术带来了严峻的挑战。

It is proved that the electric field in the effective base region is the main cause for the minority carrier to move . The output property of the transistor is almost the same as that of MOS field effect transistor .

证明了这种 晶体管有效基区中的电场是载流子输运的主要机制，它的输出特性与MOS场 效应管的输出特性相似。

Party B shall complete the assembling of all transistor radios and effect shipment within the mutually agreed unless some unforeseen circumstances beyond control have occurred .

除不能预见的无法控制的情况外，乙方必须在双方约定的时期内完成 晶体管收音机的装配和 交货任务。

With the whole new method simple calculation instead of the traditional measures which used to design low noise single-stage negative feedback amplifier the relations among the transistor data feedback effect noise factor as well as singal resistance are studied .

本文一改过去负反馈低噪声放大器的设计步骤，采用全新的方法&方框图法，确定了负反馈电路中 晶体管参数，反馈 深度、噪声系数、信号源内阻和工作频率之间的关系。

I-V characteristics of the heterojunction bipolar transistor ( HBT ) are presented to account for self-heating effect of RF power HBT 's.

从器件I-V特性的角度，表征了射频功率异质结双极 晶体管（HBT）的自加热 效应。

Study on thermoelectric feedback effect of the transistor bringing up a method to model the heat distribution of transistors including thermoelectric feedback effect by conversion of the thermoelectric feedback effect into resistivity variation of Si with temperature and introduction of transistor array . 5 .

对 双极 功率 晶体管的热电反馈效应进行了研究，提出将热电反馈效应问题简化为材料电阻率随温度变化的问题，并通过晶体管阵列，提出了建立包含热电反馈 效应的双极晶体管热分布模型的方法。

The current gain is one of the most important parameters of bipolar junction transistors ( BJTs ) . The degradation of the current gain for transistor is significant and typical radiation damage effect .

电流增益是双极型晶体管的电性能参数中关键的参数，其衰减是双极型 晶体管最显著同时也是最典型的辐射损伤 效应。

Such generator outputed current impulses of 7 ns wide and 6 A high from the two-stage avalanche transistor matrix using the avalanche effect .

利用 晶体管的雪崩 效应，通过两级雪崩 晶体管阵列，得到了7ns、6A的大电流窄脉冲。

A simple kind of field effect transistor self electrooptic effect device ( FET SEED ) smart pixels has been fabricated by interconnecting SEEDs and GaAs FETs on a printed circuit board .

在一块印刷电路板上通过将自电光 效应器件（SEED）与GaAs埸效应晶体管（FET）进行互连制作了一种简单的场效应 晶体管 －自电光 效应器件（FET－SEED）灵巧像素。

For the composition of the optocouplers with transistor output the noise theory radiation mechanism and radiation effect are expounded establishing an irradiation noise test system .

针对 晶体管输出型光电耦合器的结构组成，详细阐述了其噪声理论、辐照机理和辐照 效应，建立了光电耦合器的辐照噪声测试系统。

Numerical Analysis of Single Electron Transistor / Field Effect Transistor Hybrid Memory Cell

单电子 晶体管/场 效应管混合存储单元数值分析

The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor ) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor ) etc. as substitute for hydrogen thyratrons .

用IGBT（绝缘栅双极性 晶体管）和功率MOSFET（金属氧化物半导体场 效应管）等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。

The high electronic mobility transistor is a Field Effect Transistor which has a series of merits such as high-frequency low noise high efficiency and so on .

高电子迁移率 晶体管是一种新型的场 效应晶体管，具有高频率、低噪声、大功率等一系列的优点。

Transistor blocking is investigated using hyperbolic function . A general expression is obtained showing the effect of interference on the useful output and methods of raising the blocking level are discussed .

本文用双曲线函数法研究了 晶体管 高频 放大器的阻塞问题，推导了有用输出与 干扰的一般 关系式，讨论了提高阻塞电平的方法。

The testing objects of the instrument are low power transistors including the common diode the bipolar transistor the field effect transistor and so on .

本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性 三极 管、场 效应管等。

The amorphous silicon thin film transistor ( a-Si : H TFT ) structure for effectively suppressing backlight illumination effect is proposed in this paper .

提出一种能有效抑制背光照 影响的非晶硅薄膜 晶体管（a-Si：HTFT）结构。

The significance of understanding circuit symbols of transistor and field effect tube

巧识 晶体管、场 效应管电路符号的意义

Thin film transistor ( TFT ) is one type of field effect transistors ( FET ) .

薄膜 晶体管（TFT）是众多场 效应晶体管（FET）中的一种。

By means of two dimensional numerical analysis the temperature distribution of the transistor and the major factors influencing the temperature rising under the self heating effect are investigated .

以 基本 的 Poison 方程、 电流 方程及 热流 方程为基础，采用二维数值分析法，确定了器件内部自升温 效应下的温度分布特点，以及决定 器件自升温幅度的主要因素。

Single-electron transistor has received extensive attention and intensive research in re-cent years by virtue of its advantages such as ultra-small geometry ultra-low power dissipation ultra-low operating voltage and ultra-high operating frequency based on the Coulomb bloc-kade and quantum size effect .

基于库仑阻塞 效应和量子尺寸 效应工作的单电子 晶体管（SET）由于具有超小器件尺寸、超低功耗、超低工作电流和超高工作频率等特点，受到人们的重视和深入研究。

Urease-based field effect transistor biosensor has been fabricated by the transfer of urease / amphiphile mixed Langmuir films onto ion-sensitive field effect transistor ( ISFET ) .

用LB膜技术将脲酶／两亲性分子混合Langmuir膜转移到离子敏感场 效应晶体管（ISFET）表面，制成了脲酶场效应 晶体管生物传感器；

Temperature compensate transistor has good compensate effect to sensitivity drift of the pulse image sensor the results apply equally to other fields .

给出的温度补偿 晶体管对该脉象传感器的灵敏度温度漂移补偿 效果好，有推广应用前景。

The Single Transistor Latch Effect of Thin Film Fully Depleted SOI MOSFET

薄膜全耗尽SOIMOSFET单 晶体管Latch 效应

Amorphous Silicon Thin Film Transistor Structure for Effectively Suppressing Backlight Illumination Effect

一种能有效抑制背光照 影响的非晶硅薄膜 晶体管