Control technology of minority carrier lifetime can effectively reduce the switching time and the peak reverse current of 4H-SiC PiN diode and improve switch characteristics of device .

少子寿命控制技术可以有效减小4H-SiCPiN 二极管 开关时间与反向峰值电流，改善器件的开关特性。

The application of the high-frequency amplifier simplifies the circuit structure and the mechanism for forming soft switching effectively prevents cross interference when multi-output performed and obviously reduces the noise caused by reserve recovery of the output rectifier diode .

高频磁放大器的应用简化了电路结构和软 开关形成的机理，并能有效防止多路输出时的交叉干扰，明显地降低因输出整流 二极管的反向恢复性能造成的电磁噪声。

However the switching power loss of Si p-i-n diode increase with the switching frequency so that it is necessary to reduce the switching power loss by lifetime control technology which employs lifetime killer such as Au Pt or radiation to lower the stored charge ( Qs ) .

但是，其 开关功耗随着开关频率的提高而增大以至于不得不采用寿命控制技术（掺金、铂和辐照等）来降低少数 载流子寿命从而降低开关功耗。

Zero voltage switching is realized for all switches over a large load range by using an inductor and the leakage inductance of a high frequency transformer . The diode reverse recovery is also reduced with zero current switching with pulse-width modulation control .

在电感和变压器漏感的作用下，变换器中的开关元件能够在较大的负载范围内实现零电压 开关，同时在脉宽调制的控制下， 二极管实现了零电流关断。

After studying the relationship between IGBT switching loss and the freewheeling diode switching characteristics it points out that both devices have restriction mutually and can not reduce switching loss by quickening up switching speed .

在研究了IGBT 开关损耗与续流 二极管的互相关系后，本文指出IGBT开关损耗与续流 二极管开关特性存在互相制约，无法通过加快换流速度来降低开关损耗。

With the more and more extensive application of power electronics technology especially with the increasing frequency of main switching device there have a higher requirement to the power switching diode . The Si p-i-n diode have played an important role in these areas so many years .

随着电力电子技术应用的深入，尤其是主开关器件工作频率的不断提高，对功率 二极管 性能提出了更高的要求，多年来硅P-i-N二极管一直在这方面扮演着重要角色。

A DC high - voltage switching source system model was developed including a buck converter resonant converter high voltage transformer and diode - capacitor voltage multiplier .

建立了包含Buck变换器、谐振变换器、高压变压器和倍压 整流器的直流高压 开关电源系统仿真模型。

Silicon high-current Schottky barrier switching diode

硅大电流肖特基 开关 二极管

The switching losses model of neutral-point-clamped three-level inverter with widely used IGBT and fast recovery diode is developed .

作为方法的应用，研究了三电平中点箝位式变换器 开关损耗，研究的器件为主流功率器件IGBT和快恢复 二极管。

Because hard switch has the disadvantages like huge switching loss serious EMI and weakness in realizing high frequency DC / DC converter adopts a Zero voltage switch control method of phase-shifted full bridge with a clamp diode in the primary side .

由于硬开关 开关损耗大，EMI（电磁干扰）较严重，不利于实现高频化，因此，DC/DC变换器选用一种原边带箝位 二极管的移相全桥ZVS（零电压开关）控制方式实现。

Zero-Voltage Switching ( ZVS ) of the IGBT ( MOSFET or BJT ) and Zero-Current Switching ( ZCS ) of the rectifier diode can reduce the switching losses in both the inverter and the rectifier .

IGBT（MOSFET或BJT）的零电压开关和整流 二极管的零电流 开关能够降低逆变器和整流器中的损耗。

In this paper some new multiple diode such as varicap diode switching diode diode array damper diode modulation diode and Schottky diode are discussed .

本文介绍了几种新型复合二极管，包括变容二极管、 开关 二极管、二极管阵列、阻尼二极管、调制二极管和肖特基二极管等。

Using a pulse signal as a control variable and high-speed switching characteristic of field effect transistor the modulating circuit implements pulsed laser diode driver .

调制电路以脉冲信号作为控制量，利用场效应管的高速 开关特性，实现了对 半导体激光器的脉冲驱动。

High-speed switching diode array .

高速 开关 二极管阵列。

Growth technique of Ag boss is mainly used for forming microelectrodes of ISS181 series high voltage and cache switching diode .

银点微电极生长技术主要用于ISS181系列高压超高速 开关 二极管的电极成型，是一项制约ISS181封装国产化的瓶颈技术。

The design methods of lossless snubber circuit to reduce the main switching transistor and freewheeling diode interference and the compensation inductor circuit to the common mode noise interference are given .

给出了减小传导干扰的无损耗缓冲电路、抑制 共模干扰的补偿电感设计方法。

Optically triggered MOS gated solid state relay is a new switching device which is composed of an MOS gated thyristor a phototransistor an enhanced mode MOSFET and a Zener diode .

光控MOS栅固态继电器是由MOS栅控晶闸管、开关三极管、光电耦合器、增强型MOSFET和齐纳 二极管组成的新型 开关器件。

This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination .

并 使用连续性方程，在考虑表面复合过程的情况下，提出了短 二极管的少子寿命计算公式。

Soft Switching Active-clamp Dual-switch Flyback Converter Comparison of voltage shifted modulation technology in four-level diode clamping inverter

一种零电压 开关的有源箝位双管反激变流器四电平 二极管箝位逆变器调制方法的比较

By analyzing the switching characteristics of IGBT and the anti-parallel diode the functions of IGBT losses with voltage current junction temperature and dead time are derived .

通过分析换流器IGBT器件的 开关特性，并考虑反向并联 二极管的影响，推导出IGBT损耗与电压、电流、结温、死区时间等参数的关系式。

The switching action of the comparator and diode D3 prevents latch-up due to a large positive-boost transient .

比较器和 二极管D3的 切换行动防止由于一个瞬间的正极充电引起的闭锁。