Switching time of bipolar transistor

双极 晶体管 开关时间

In this paper process-induced defects in nitrogen doped CZ silicon ( NCZ-Si ) and their influence on power diode and switching transistor characteristics are investigated .

在本文中，我们研究了掺氮直拉硅单晶中工艺诱生缺陷的特点以及它们对功率二极管和 开关 晶体管性能的影响。

The article introduces a kind of soft switching double transistor forward converter with a lossless snub circuit .

介绍了一种具有无损耗缓冲电路的软 开关 双管正激式变换器。

The C'uk converter suffers from high working voltage on its switching transistor . Study shows that the voltage would be effectively reduced by increasing the working frequency of the switching transistor and the employing graded frequency control technique can solve this kind of problems .

通过提高开关工作频率而有效降低开关管工作电压，并利用分段频率控制技术较好地解决了C'uk变换器工作于轻载时其 开关 管工作电压过高的问题。

In order to switching the power transistor on or off quickly in DC / DC switching regulator it is necessary to design a special output driver circuit .

为使DC/DC开关电源的功率 开关 管及时地 导通或截止，需要设计专用的输出驱动电路。

By experiments it shows that the rectifier can operate efficiently and its gate drive voltage of the switching transistor can be immune from the input and / or ouput voltage and current .

实验证明该整流器具有效率高，且 开关 管的门极驱动电压不受输入/输出电压和输入/输出电流影响的优点。

Using a pulse signal as a control variable and high-speed switching characteristic of field effect transistor the modulating circuit implements pulsed laser diode driver .

调制电路以脉冲信号作为控制量，利用场效应 管的高速 开关特性，实现了对半导体激光器的脉冲驱动。

This paper presents a new high-voltage high-speed Q-regulated switching power and describes the design of the mixed main circuit of MOS transistor and electron tube and also some support circuit such as the interface circuit MOS drive circuit overflowing protect circuit and high-voltage stabilizing circuit .

介绍一种高压快速调Q 开关电源，设计了以功率MOS 管驱动高压电子管为主电路的快速 开关，并设计了电源的接口电路、MOS管驱动电路、过流保护电路及高压源稳压电路。

Studies on Properties of Compound Switching Transistor

复合 开关 晶体 三极 管特性的探讨

The switching process of a transistor Schmitt circuit

晶体管施密特电路的 开关过程

In this paper a phase shifting pulse width modulated ( PWM ) soft switching high voltage invert power supply has been developed with the use of the principle of advanced invert technique and the new type of power semi-conductor device-Insulated Gate Bipolar Transistor ( IGBT ) .

本文采用最新的逆变思想与新型的开关器件&绝缘栅型双极 晶体管（IGBT），研制出了移相式PWM软 开关高压逆变电源。

This scheme speeds up the simulations of chip interconnect with a large number of simultaneous switching devices while acquiring better accuracy compared to the corresponding transistor level models .

与相应的 晶体管级模型相比，该方法在获得了更高仿真精度的同时，提高了具有大量同步 开关器件芯片互连的仿真速度。

In this paper the inverter techniques for photovoltaic power supply are discussed and it is pointed out that the main factors which affect inverting efficiency are transformer consumption power electronic switching transistor consumption as well as driving circuit consumption control circuit consumption at light load operation .

本文主要讨论了太阳能逆变器技术要求，指出影响逆变器效率的主要因素是变压器及功率 开关 管的损耗，驱动电路与控制电路的功耗是影响逆变器低负荷运行效率的重要原因。

By analyzing the switching characteristic of the multiple - β transistor and combining its features of emit-input emit-output and high working speed a ternary double-edge-triggered flip-flops is designed in the paper .

该文通过对多β 晶体管 的 开关特性分析，结合其射极输入、射极输出、高速工作等特点设计了三值的双边沿触发器。

In order to solve the shortcoming of arc welding inverter at the present time such as the big switching stress of main power transistor the large wastage of power source and the low reliability of the system the settlement of soft-switching technique is brought forward .

针对目前弧焊逆变器存在的主功率 管 开关应力大、整机损耗大、可靠性低等缺点，提出用软开关技术来解决。

Study on the time delay model of the bipolar switching transistor and its loading capability

双极型 开关 晶体管延时模型和带负载能力研究

The experimental results show that the advantage of the double closed loop switching power supply lies in rapid current limiting characteristics low power of the high frequency transformer and power switching transistor good rapidity and stability of the dynamic response .

实验结果表明：该系统具有快速限流特性，使高频变压器功耗和 开关 管功耗下降，系统动态响应的快速性和稳定性较好。

The advanced technologies have improved transistors switching rate and reduced transistor gate delay . However signal transmission and power consumption are getting worse due with the global wire delay .

先进微电子与半导体工艺技术极大地提升了 晶体管 翻转速度，降低了门延时，但是 芯片中全局线时延导致的信号传输与功耗问题却变得越来越糟糕。

A novel zero-voltage and zero-current switching ( ZVZCS ) three-level converter and the drive circuit of the transistor were analyzed .

分析了一种新颖的零电压零电流（ ZVZCS） 开关之电平变换器，以及 功率 晶体管的驱动电路。

The switching process of transistor Schmitt circuit was studied in this paper .

本文研究了 施密特电路的 开关过程。

By applying switch-signal theory the interaction between MOS transmission switching transistor and current signal in current-mode circuits is analyzed and the theory of transmission current-switches which is suitable to current-mode CMOS circuits is proposed . The circuits such as ternary full-adder etc.

本文应用开关信号理论对电流型CMOS电路中MOS传输 开关 管与电流信号之间的相互作用进行了分析，并提出了适用于电流型CMOS电路的传输电流开关理论。

The collector voltage of the switching transistor is determined by the voltage of the power network .

晶体 开关 管的集电极与 发射极间的电压取决于电网电压。

In this switching power supply the novel mode of serial two-transistor is adopted to solve the difficulty of choosing switch transistor under the condition of high-voltage input .

该 开关电源采用新颖的双管串联模式，解决了高电压输入条件下开关 管的选用难题。

The Method of Increasing the Switching Frequency of Transistor Inverter-The Design of Optimal Base Current and Saturation Control Circuit

提高脉冲逆变器 开关频率的技术&最佳 基极驱动电流和抗饱和电路的设计

Switching time of the new-type transistor is shortened five times .

新型 晶体管 的 开关时间缩短了五分之四。

In this pager the characteristics of high voltage switching power transistor used in electronics ballast such as breakdown voltage saturation voltage and switching time are introduced .

介绍了用于节能灯照明电路的高 耐压功率 晶体管的反向击穿电压、饱和压降和开关时间等参数的设计要求。

The design methods of lossless snubber circuit to reduce the main switching transistor and freewheeling diode interference and the compensation inductor circuit to the common mode noise interference are given .

给出了减小传导干扰的无损耗缓冲电路、抑制 共模干扰的补偿电感设计方法。

Simulation of Charge Storage in Silicon Switching Transistor

Si 开关 晶体管电荷存贮 效应的模拟

The switching time of this new transistor reduced three times .

这种新 晶体管 的 开关时间将缩短三分之二。