threshold current

[ˈθrɛʃˌold ˈkɚrənt][ˈθreʃhəuld ˈkʌrənt]

阈电流阈值[门限]电流

  • Through the analysis of the loss and threshold characteristics of a laser diode ( LD ) the threshold current density of LD with external feedback is calculated according to the theory of multi-beam interference and the definition of equivalent reflection factor .

    通过对半导体激光器(LD)的损耗和阈值电流特性的分析,引入等效反射系数的概念,根据多光束干涉的原理,导出了在外腔反馈作用下LD的 阈值 电流公式。

  • Therefore based on the consideration of both photocurrent increase factor due to transient ionization effects and threshold current density decrease factor due to displacement effects we obtain an integrated LD optical response model of radiation effect .

    因此,在综合考虑了瞬态电离效应的光电流增加因素和位移效应的 阈值 电流密度衰减因素的基础上,获得了LD辐射效应综合光学响应模型。

  • Based on the model the laser characteristics such as the threshold current mode suppression ratio etc. have been specified .

    利用该模型对光纤光栅外腔半导体激光器的 阈值 电流、模式抑制比等进行了研究,得到了一些新的结论,并对此结论作出了合理的解释。

  • In particular there is an optimal well number corresponding to the lowest threshold current density for MQW structure in the microcavity lasers .

    特别是在微腔多量子阱结构中存在一个最佳阱数对应着 阈值 电流密度的最小值。

  • After an expression for photon density in fiber ring semiconductor lasers ( FRSLs ) has been deduced the relations between the threshold current output power and fiber coupling ratio are studied theoretically and experimentally .

    首先导出了光纤环形腔半导体激光器中光子数密度的解析表达式后,分别从理论和实验上研究了 阈值 电流、输出功率和光纤耦合比之间的依赖关系。

  • The minimum threshold current could be less than 1 mA when the facet reflectivity is 0.9 .

    端面反射率为0.9时,最小 阈值 电流可以小于lmA。

  • The effects of device temperature on the laser threshold current external differential quantum efficiency ( DQE ) and output wavelength are also investigated .

    研究了器件温度对于激光 阈值 电流、外微分量子效率和输出波长的影响。

  • Further analysis shows that it is caused by the enhancement of the threshold current density and threshold carrier density in terms of optical-gain spe .

    进一步分析认为,这是因为条宽变窄导致器件 阈值 电流密度、阈值载流子密度变大造成的。

  • Through numerical calculation and analysis the effects of structure parameters on far field pattern and threshold current density are studied .

    通过数值计算分析,详细研究了结构参数对远场及 阈值 电流密度等的影响。

  • The output power of high-power semiconductor lasers is greatly influenced by the temperature change small temperature change can cause large fluctuation in output power and wavelength threshold current and life will be affected .

    大功率半导体激光器的输出功率受温度变化的影响很大,微小的温度变化就会导致输出功率很大的波动,而且波长、 阈值 电流和使用寿命也会受到影响。

  • When the relative humidity of gas at the inlet is increase the threshold current density is linearly decreased ;

    临界 电流随阴极气体进口相对湿度的增加而线性下降;

  • At room temperature the random lasing from ZnO with the threshold current 43 mA was obtained .

    室温条件下在该结构中获得了 阈值 电流为43mA的ZnO随机激光输出。

  • In order to give a low threshold current density the curvature radius should be more about 150 μ m.

    为了保持较低的 阈值 电流,本文建议曲率半径选择在15μm左右。

  • Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers '

    GaAs基长波长量子点激光器增益和 阈值 电流密度的理论分析(英文)

  • The introduce of band gap discontinuity in heterostructure can obtain high injection ratio decrease further threshold current and increase the output power .

    异质结构引进的带隙差可以实现高注入比、进一步降低了 阈值 电流,同时提高了输出功率。

  • The influence of external optical injection on the threshold current of external cavity laser diode with fiber Bragg grating is investigated experimentally . In order to obtaining high extinction ratio and high conversion rate simultaneously the injection current range is determined .

    实验研究了注入光对光纤光栅外腔半导体激光器 阈值 电流的影响,给出了可同时获得高消光比和高转换速率的注入电流范围。

  • Also the improvement of quantum dot lasers ' performance is investigated through vertical stacking and p-type doping and the optimal dot density which corresponds to minimal threshold current density is calculated .

    研究了垂直层叠和p型掺杂对量子点激光器性能的改善,并讨论了获得极小 阈值 电流密度时的最佳量子点密度。

  • And double oxide-confining regions offer a method of decreasing threshold current and controlling high order modes .

    同时双氧化限制层为VCSEL器件提供了一种降低 阈值,抑制高 阶横模的方法。

  • The relation of device parameter on threshold current and optimal well numbers have been discussed .

    讨论了 阈值 电流 密度、最佳阱数等与器件参数(阱数、 长和 反射率等)之间的依赖关系。

  • The threshold current ranges from 60 to 80mA ;

    阈值 电流范围为60&80mA;

  • However in the course of their work time accompanied by heat generation temperature of laser diode increase will cause changes of output wavelength the threshold current and output power and other parameters seriously affecting their work performance and service life .

    但是,在工作过程中时刻伴随着热量的产生,半导体激光器温度的升高会造成输出波长、 阈值 电流及输出功率等的变化,严重影响其工作性能及使用寿命。

  • By this method the strategy that let the restrain coefficient and the threshold current in the adaptive criterion change adaptively with time operation mode and fault situation is studied . Simulation results show that the adaptive criterion is superior in sensitivity and reliability .

    讨论了该判据中制动系数和 门槛 电流如何随时间、运行方式和故障状态的变化进行自适应调整的策略,并通过仿真证实自适应判据在灵敏性、可靠性上存在更大优势。

  • The study of oxide-aperture influence on threshold current and differential resistance shows that lower threshold current can be obtained with a smaller oxide-aperture diameter .

    研究了氧化孔径对 阈值 电流和微分电阻的影响,结果表明较小的氧化孔径可以获得低的阈值电流。

  • We can monitor many parameters and characteristics by measuring TEN such as surge frequency spectrum width threshold current mode jump and stability of output light power .

    通过对激光的电 噪声的测量可以监测激光器的诸多参数和特性,如弛豫频率,谱线宽度, 阈值 电流,模式跳变及输出光功率是否稳定等。

  • The effect of current spreading in the cap layer of carbon doped GaAs laser on its threshold current was studied .

    实验研究了碳掺杂GaAs激光器帽层的侧向扩展 电流阈值的影响。

  • As well as this paper simulated and analysised the influence of temperature on the density of the laser current the threshold current power and wavelength .

    模拟分析了温度对激光器电流密度、 阈值 电流、功率以及波长等的影响。