The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics .

硅化 钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。

In this paper the titanium silicide films processed by PECVD method have been studied .

本文研究了用PECVD法制备 硅化 钛膜的 卫 艺。

Raman Scattering of Refractory Metal Titanium Silicide

难熔金属 硅化 物的喇曼散射

Titanium Silicide Formed by Means of Ion Mixing

用离子束混合形成 硅化 钛

Titanium silicide thin film formation by nh_3 plasma asisted thermal annealing

NH3等离子体增强热处理形成 硅化 钛导电薄膜

Investigation of phase change and growth kinetics of titanium silicide on silicon

硅上 硅化 钛相变和生长动力学研究

Titanium silicide has received great interests due to its low resistivity high thermal and chemical stability as well as high compatibility with Si technology .

硅化 钛具有低电阻率、较高的热 稳定性以及化学稳定性等诸多优异的性能，且由于其可以与硅工艺兼容而具有重要的研究价值。

The Influence of Gas Mixture Ratio on the Properties of Titanium Silicide Films Formed by PECVD

气体流量比对PECVD 硅化 钛薄膜性质的影响

A Self-Aligned MOSFET Technology with As Ion Implantation Into Titanium Silicide

As离子注入 硅化 钛自对准MOS器件技术研究

A double-layer polysilicon bipolar technology is presented . Deep-trench isolation and BF_2-implanted base layer combined with rapid thermal annealing ( RTA ) are used in the process for emitter diffusion and titanium silicide annealing .

报道了一种使用深槽隔离和注入基区及快速热退火（RTA），同时为发射极扩散和 Ti 硅化 物退火的双层多晶硅双极技术。