wurtzite

['wərtˌsaɪt]['wɜ:tsaɪt]

n.纤维锌矿

  • Impurity States in Wurtzite Nitride Semiconductor Ellipsoidal Quantum Dots

    氮化物半导体椭球形量子点杂质态

  • It was found that ZnO thin films of the wurtzite structure were prepared by this method .

    研究发现,该方法可以在 玻璃 衬底上成功制备 具有 结构的ZnO薄膜。

  • However as a covalent chemical compound with the wurtzite crystal structure A1N is not easy to sinter .

    然而, A1N是强共价键化合物,烧结活性低,而且A1N很容易水解引入氧杂质。

  • The results of XRD show that the thin film has a wurtzite structure .

    结果表明:沉积 电位对薄膜形貌有着显著的影响; 多孔片晶 ZnO 结构;

  • Paradoxically wurtzite boron nitride 's hardness appears to come from the flexibility of the bonds between the atoms that make it up .

    令人意想不到的是, 氮化硼的惊人硬度居然源自原子间 富于弹性的键。

  • All the sputtering AZO films had a hexagonal wurtzite structure with ( 002 ) preferred orientation .

    溅射法制备的AZO薄膜均为六 结构,具有(002)择优取向。

  • First-principle Study of Electronic and Optical Properties of Wurtzite Structure GaN

    GaN光电性质的第一性原理研究

  • The results show that it has a polycrystalline hexagonal wurtzite structure .

    结果表明:ZAO薄膜的结构 标准 ZnO ,没有 Al2O3 出现;

  • The X-ray diffraction ( XRD ) patterns show that ZAO thin films has a hexagonal wurtzite structure .

    在氮气气氛下进行退火处理,X射线衍射(XRD)谱表明ZAO薄膜具有六角 晶体结构。

  • The Energy of an Exciton in a Wurtzite GaN / Al_xGa_ ( 1-x ) N Quantum Well

    GaN/AlxGa(1-x)N量子阱中激子能量

  • ZnO is a wide direct-gap semiconductor with a hexagonal crystal structure of wurtzite .

    ZnO是一种具有 晶体结构的直接宽带隙半导体材料。

  • Exciton States and Interband Transitions in Wurtzite ZnO / Mg_xZn_ ( 1-x ) O Coupled Quantum Dots

    耦合 ZnO/MgxZn(1-x)O量子点中的激子态和带间光跃迁

  • All the films have the single-phase wurtzite structure with c-axis preferred orientation .

    薄膜均具有单相、c轴取向的 结构。

  • X-ray diffraction spectra showed that the sample is hexagonal wurtzite ZnO structure .

    X射线衍射谱表明样品为六角 结构的ZnO晶体。

  • The results indicated that GaN particles in wurtzite structure were obtained at the Ga source temperature of 850 ℃ .

    结果表明:当Ga源温度为850℃时得到 结构的GaN晶体颗粒。

  • Phase Transition Elastic Property and Electronic Structure of Wurtzite and Rocksalt ZnO

    和岩盐结构ZnO的相变、弹性性质和电子结构研究

  • Results show that the AZO thin films have polycrystalline hexagonal wurtzite structure with highly c-axis preferred orientation .

    结果表明,实验制备的柔性AZO薄膜为六角 结构,且具有良好的c轴择优取向。

  • These synthesized nanostructures were single-crystalline wurtzite structure .

    这些合成的纳米结构都是 单晶结构。

  • The results show that all the samples are wurtzite structural and have c-axis preferred growth orientation .

    分析结果表明:不同 掺杂 浓度的样品都 结构,且其衍射峰都具有明显的c轴取向。

  • The result of the XRD indicated that the production structure was wurtzite which was mixed with hydrocarbon .

    射线衍射结果表明,掺入了碳氢化合物的反应产物的 晶须 结构。

  • And the crystalline structure is hexagonal wurtzite structure exist natively zinc interstitial atom and oxygen vacancies defects .

    其晶体结构是六方 结构,天然存在着锌间隙和氧空位缺陷。

  • The nanorods have wurtzite structure without electrical field assistance and are primarily of zincite structure under electrical field .

    无电场时制得的ZnO纳米棒属 结构,而在电场下制得的主要是 红锌矿结构。

  • First-principles study of the crystal structures and electronic properties of S doped wurtzite ZnO

    S掺杂 ZnO晶体结构及电子性质的第一性原理研究

  • Numerical calculations on an AlN / GaN / AlN wurtzite QWW are performed .

    对一个 AlN/GaN/AlN 量子阱线进行了数值计算。

  • XRD pattern indicates that ZnO nanorods have a typical wurtzite structure and grow along with the c-axis direction well .

    XRD表征说明,ZnO纳米棒 结构,沿C轴取向性生长。

  • X-ray diffraction ( XRD ) indicates the nanocrystalline ZnO thin films with a polycrystalline hexagonal wurtzite structure .

    采用有效的手段对样品的质量表征:X-射线衍射(XRD)结果表明,纳米ZnO薄膜具有六角 多晶结构。

  • First-principle Calculation of Electronic Structure of Wurtzite ZnO Crystal

    氧化 电子结构的第一性原理计算

  • The resulting NZO nanocrystals have a hexagonal wurtzite structure with a double cone-like morphology .

    制备的NZO纳米晶均为六方 结构,其形貌仍为双锥体。