Its configuration is similar to a conventional transistor with the exception of the addition of a v or π layer ( transition region ) between collector and base regions and it is operated as a diode .

除在 收集 结与基区之间插入了一个v型或π型渡越区外，器件的结构与通常 晶体管的很相似，但它是作为两端器件运用的。

Under the state of optimum operation of the amplifier the following basic amplifier parameters are determined : the waveforms of the collector current the collector-to-emitter voltage the instantaneous power dissipated in the transistor the collector efficiency and the values of the load-network components .

在最佳工作状态下，确定了放大器的集电极电流和集电极-发射极电压波形、 晶体管的瞬间能量损失、 集电极效率和负载网络参数。

We 've seen already how maintaining a constant base current through an active transistor results in the regulation of collector current according to the β ratio .

我们已经看到有源 晶体管的恒定的基极电流是如何以系数β制 集电极电流的。

Essentially the structure of linear magnetic field sensor is same as a bipolar lateral transistor with twin base and twin collector .

其结构为横向双基极、双 集电极 晶体管， 器件对磁场呈线性响应。

A vertical PNP transistor with P-buried collector is used as injector which is merged with the downward operating NPN transistor .

该结构采用P埋 集电极纵向PNP 晶体管作注入器，巧妙地实现了与正常向下工作的NPN晶体管并合。

The transistor produces 70 Watts of output power with 8.5 dB of gain and 50 % collector efficiency at 2 GHz and for short pulse operation .

在2GHz短脉冲工作条件下，该 晶体管输出功率70W，增益8.5dB， 集电极效率50%。

A transistor has three electrodes the emitter the base and the collector .

晶体管有三个电极，即发射极、基极和 集 电 集。

We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer .

本文从包括埋层影响的 集区杂质分布出发，求出了寄生PNP 晶体管的共基极电流放大系数。

The low phase noise potential of K-band VCO using NPN silicon-Germanium transistor with low noise floor high cut-off frequency ( 70GHz ) and high collector current capacity has been studied in detail .

因此在设计中，选用了具有低噪声基底、高截止频率（70GHz）、高 集电极电流容量的锗化硅材料的NPN 晶体管，有利于提高系统的噪声性能。

So do the transistor with high collector-emitter voltage and high collector current .

其次，发射装置选用了高 耐压的晶体 三极 管完成对电压和电流的放大。

Regardless of type NPN or PNP-type tubes the internal transistor has three areas namely the launch area base collector area the three areas form two PN junction .

无论NPN型还是PNP型管， 三极管内部均有三个区、即发射区、基区、 集 电区，三个区形成两个PN结。

For example a transistor is a controllable switch but it is directional between the collector and emitter and it has interactive control between the base and emitter .

例如， 晶体管是可控的开关，但它在 集电极和发射极之间是定向的，并且在基极和发射极之间是配合控制的。

The region in a transistor between the emitter and the collector .

晶体管中发射极和 集电极之间的区域。

Therefore if we have a way of holding emitter current constant through a transistor the transistor will work to regulate collector current at a constant value .

于是，只要我们能让 晶体管的发射极电流保持恒定，它 就能保持发射极电流为恒定值。

Construction and Application of the Multi-channel Electrophysiological Recording System ; A transistor has three electrodes the emitter the base and the collector .

多电极电生理系统建立、完善及应用 晶体管有三个电极，即发射极、基极和 集 电 集。

Remember the transistor 's collector current is almost equal to its emitter current as the α ratio of a typical transistor is almost unity ( 1 ) .

不要忘了，通常典型晶体管的系数α乎是1，因此 晶体管 集电极电流与发射极电流也几乎是相等的。