Establishment of Prediction Formula for Transistor Base Failure Rate of China

晶体管 基本失效率预计公式的建立

Microwave High-Power Transistor Base Ballast Method Research

微波大功率 晶体管 基极镇流方法研究

Its configuration is similar to a conventional transistor with the exception of the addition of a v or π layer ( transition region ) between collector and base regions and it is operated as a diode .

除在收集结与 基区之间插入了一个v型或π型渡越区外，器件的结构与通常 晶体管的很相似，但它是作为两端器件运用的。

The Test System For Thermal Resistance Of Power Transistor base on Virtual Instrument

基于虚拟仪器的功率 三极 管热阻测试系统

In this paper the work is introduced on investigation on non classical CMOS structure in the quest to find the ultimate transistor structure that will permit evolutionary improvements of the existing CMOS technology base .

主要介绍了对各种非典型CMOS结构的研究，从而寻求最终 的结构模式适应不断变化的CMOS发展 技术。

In the paper the recent development of static induction transistor charge modulation devices buck charge modulated device base stored image sensor amplified MOS image and CMOS active pixel sensors are emphatically described .

主要介绍静电感应 晶体管、电荷调制器件、体电荷调制器件、 基极存储图象传感器、增强MOS图象、CMOS等有源象素图象传感器的新进展。

For example a transistor is a controllable switch but it is directional between the collector and emitter and it has interactive control between the base and emitter .

例如， 晶体管是可控的开关，但它在集电极和发射极之间是定向的，并且在 基极和发射极之间是配合控制的。

Essentially the structure of linear magnetic field sensor is same as a bipolar lateral transistor with twin base and twin collector .

其结构为横向双 基极、双集电极 晶体管， 器件对磁场呈线性响应。

A transistor has three electrodes the emitter the base and the collector .

晶体管有三个电极，即发射极、 基极和集电集。

The empirical formulae are developed to compute the breakdown voltage of transistor with the base open quickly and quite exactly .

根据数值计算结果找到了快速、精确计算 基极 开路 晶体管击穿电压的经验公式。

Power transistor base drive circuit

功率 晶体管 基极驱动电路

Regardless of type NPN or PNP-type tubes the internal transistor has three areas namely the launch area base collector area the three areas form two PN junction .

无论NPN型还是PNP型管， 三极管内部均有三个区、即发射区、 基 区、集电区，三个区形成两个PN结。

Construction and Application of the Multi-channel Electrophysiological Recording System ; A transistor has three electrodes the emitter the base and the collector .

多电极电生理系统建立、完善及应用 晶体管有三个电极，即发射极、 基极和集电集。

A planar SiGe heterojunction bipolar transistor was fabricated using polysilicon emitter technology and SiGe base grown by Molecular Beam Epitaxy ( MBE ) .

利用多晶硅发射极技术与分子束外延生长SiGe 基区技术相结合，研制成适于集成的平面结构、发射结面积为3μm×8μm的SiGe异质结双极 晶体管（HBT）。

A Model for the Technique Parameter Calculation of Up-diffused I ~ 2L NPN Transistor Base

上扩散I~2L电路中纵向npn 管 基区工艺参数的近似计算模型

The edge crowding effect of emitter current in a transistor caused by self bias of base resistor is one of the factors to limit its capability of loaded current .

由 基区电阻的自偏压引起的 晶体管发射极电流集边效应，是限制 晶体管承载电流能力的因素之一〔1～4〕。

Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor . A structure of a sub-100 nm base width silicon transistor has been described in this paper .

禁带宽度和少子复合寿命是硅 晶体管发射区中重要的物理参数。本文描述了一种实现亚100nm 基区宽度的晶体管结构。

It 's coefficient of magneto-resistance is Δ R / R ≥ 9 % the coefficient of collector current amplify is MC > 587 % ( in room temperature ) . The properties of spin transistor increase as the base thickness decreasing .

该薄膜磁阻系数ΔR/R≥9%，全金属自旋 晶体管试样集电极电流变化MC>587%（常温），且其性能随 基极Ag层厚度减小而增强。

The Method of Increasing the Switching Frequency of Transistor Inverter-The Design of Optimal Base Current and Saturation Control Circuit

提高脉冲逆变器开关频率的技术&最佳 基极驱动电流和抗饱和电路的设计

The resistor and transistor base doping has been accomplished by implanted boron while the emitter doping by implanted phosphorus .

电阻器和 晶体管 基区的掺杂由注入硼来实现，发射区的掺杂则靠注入磷来完成。