wafer test

晶片试验

  • Beginning with principles of all kinds of optical surface testing the article have developed a new kind of precision wafer testing system based on polarizing interference and phase-stepping interference . Firstly we analyzed the principles and methods of optical surface test .

    本文从光学表面检测的原理入手,开发研制了一种基于偏振光干涉成像及相移干涉术的精密 晶圆检测系统和 装置

  • With the fast growing portable electronics market and higher need of wafer test power consumption problem of built in self test ( BIST ) has attracted more and more considerations .

    随着手持设备的兴起和 芯片晶片 测试越来越高的要求,内建自测试的功耗问题引起了越来越多人的关注。

  • Geometric Parameters of Silicon Wafer and Its Test and Measurement

    硅片的几何参数及其 测试

  • Probe Card Used in Wafer Test of Microcontrollers

    用于微控制器 晶片 测试的探针卡

  • The wafer level packaging ( WL-CSP ) technologies and their application progresses which including the key technologies of WL-CSP the package test description the observation method and the reliability the analyses of WL-CSP are summarized .

    综述了 圆片级芯片尺寸封装(WL-CSP)的新技术及其应用概要,包括WL-CSP的关键工艺技术、封装与 测试描述、观测方法和WL-CSP技术的可靠性及其相关分析等。

  • Finally introduced the quartz wafer sorting algorithm in accordance with the appearance of the classification after the wafer automatic calibration corner area and the inner area detection algorithm and the presentation of test results .

    最后介绍石英晶片外观分选的定位算法、依照分类自动标定过后的 晶片角落区域和内部区域的检测算法,并演示 检测结果。

  • This paper discusses the standard wafer level electromigration accelerate test theory test system constructing test procedure and test result analysis . Besides it also introduces the experience and know how of the test .

    深入探讨了标准 晶片级电迁移加速 试验 方法(SWEAT试验方法)的 试验原理、试验系统的建立、试验步骤及试验结果的分析等,并将在实践中总结出的试验经验和技巧介绍给大家。

  • Three wafer level r ■ liability test methods for electromigration failure of metal lines are introduced : ( 1 ) breakdown energy of m ■ tal ( BEM ) Technique ;

    介绍3种 圆片级金属化电迁移可靠性 测试技术:(1)金属击穿能量技术;

  • The goal to evaluating process is to find the defect of reliability reliability parameters and datum can be acquired through wafer level and packaged level reliability experiments in specific test structures according to failure mechanisms .

    对工艺过程进行评估的目的在于找出存在可靠性缺陷的地方,它是针对技术磨损的机理,通过对专门设计的 测试结构进行封装级或 圆片级可靠性测试,获取可靠性模型参数和可靠性信息。

  • The technical principle and system configuration of the transient parameters on wafer test for GaAs HSIC is described .

    介绍了GaAs高速集成电路在 瞬态参数 测试的技术原理和系统组成。

  • In the meantime the wafer robot was controlled to test running by motion program based on PMAC .

    同时利用运动控制程序对 硅片 传输机器人进行了联

  • Wafer Die Disposition : Various functions related to wafer manufacturing and test .

    WaferDieDisposition:各种与 晶片制造及 测试相关的功能。

  • Study of Transient On Wafer Test Technique for GaAs HSIC

    GaAs高速电路在 瞬态 测试技术研究

  • In order to accomplish automatically transmission of the wafer during test a manipulator with synchronous belt transmission is designed .

    为了实现 硅片测试过程中的自动传输,设计了一种同步带传动的机械手。

  • Internal and outsource wafer sort / final test support abnormal yield analysis .

    生产 线支持, 成品率异常分析。

  • The principle of vacuum chuck system the dressing and testing of vacuum chuck the principle and adjusting method of silicon wafer on-line test system and the principle of the grinding force measuring are introduced .

    介绍了硅片真空夹持系统的原理、真空吸盘的修整与检测方法、 硅片 厚度在线 测量系统的原理及调整方法、磨削力在线测量原理等;

  • Wafer Level Test System of Wiring Metallization Electromigration

    金属化布线 晶片测试系统

  • Optical inspection cross section SEM inspection and wafer edge defect scan need to be repeated when test wafer is etched . With the procedure upon process setup is completed .

    试验片刻蚀后在对其边缘进行光学检测和截面SEM检测,扫描 边缘缺陷,完成工艺建立。

  • Effects of the load and relative humidity on the maximum static friction and sliding friction of Si ( 100 ) wafer were studied under micro-loads using a self-built apparatus for micro-friction tests . The test results show that effects of the load and relative humidity on micro-friction are significant .

    利用自制的微摩擦和粘附力 测试装置,研究了在微牛量级载荷下,载荷和相对湿度对Si(100) 材料与Si3N4材料组成的摩擦副的最大静摩擦和滑动摩擦的影响。