Design and Analysis of Electrostatic Microrelay with Low Threshold Voltage in MEMS

基于MEMS技术的低 阈值 电压静电型微继电器的设计与研究

We deduced a expressions for threshold voltage temperature coefficient of short channel MOST .

推导了了一个短沟道MOST 阈值 电压温度系数表达式；

Mechanical Topology Optimization for Low Threshold Voltage Capacitive RF MEMS Switches

低 驱动 电压电容式RFMEMS开关结构设计优化

A simplified threshold voltage model of fully depleted SOI MOSFET is proposed .

提出了一种简化的全耗尽SOIMOSFET 阈值 电压解析模型。

Enhanced degradation appears in both threshold voltage and transconductance under pulse stress .

在脉冲应力下， 阈值 电压和跨导的退化增强。

Its function is to provide a latching switch action upon sensing an input threshold voltage with reset accomplished by an external clock signal .

它的功能是当感应到输入 电压界 限时提供一个锁存开关，通过外部时钟信号完成复位。

The analytical solutions to1D Schrdinger equation ( in depth direction ) in double gate ( DG ) MOSFETs are derived to calculate electron density and threshold voltage .

推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和 阈 电压。

Using the averaged switch modeling approach a non-linear large-signal averaged model of non-ideal PWM switch is derived taking into account all parasitic resistances and threshold voltage of diode .

运用平均开关建模法，建立非理想PWM开关的非线性大信号平均模型，包含全部寄生电阻和二极管的 正向 压降。

The paper has analyzed temperature characteristics on high voltage power LDMOST s threshold voltage and given a calculation formula of its temperature coefficient from computing results .

阈值电压的温度系数可以用温度的线性表达式来计算，从而可以得出功率LDMOS 阈值 电压的温度系数最优化分析。

In order to measure frequency accurately on hardware circuit design a Smite variable threshold voltage comparer is used .

为了能够准确地进行频率的测量，因此在硬件电路方面设计了一个具有施密特特型的可变 门限 的 电压比较器。

The temperature compensated reference voltage stabilizes the lockout threshold voltage and hysteresis quality .

通过对自产生的基准电压进行温度补偿确保了锁定 阈值 电压和迟滞量稳定。

Experimental results indicate that the threshold voltage becomes higher as the inflow velocity becomes higher and the flow separation becomes more serious .

实验结果表明：分离越严重，来流速度越大，有效抑制翼型失速分离的 阈值 电压越大；

Deduced has been a relationship between the threshold voltage of MOSFET and the radiation dose rate .

计算了MOSFET 阈 电压与辐射剂量率之间的关系。

The threshold voltage 's shift versus the dose rate was analyzed on this device .

分析了该电路的 阈值 电压随辐射剂量率的变化关系。

In addition the threshold voltage is capable of being finely tuned with a proper gate bias .

除此之外，由于强烈的闸极耦合效应，在分离的上闸极加上适当的偏压，便可精确地调控临 限 电压。

Input current at positive-going threshold voltage

正向 阈 电压下输入电流

Design of Voltage Reference Based on CMOS Threshold Voltage

基于CMOS 阈值 电压的基准电路设计

JEDEC ? The input threshold voltage when the input voltage is falling .

在输入电压下降时的输入 门限 电压。

Threshold voltage model of strained Si channel nMOSFET

应变Si沟道nMOSFET 阈值 电压模型

One new domino logic circuit whose architecture is based on full PMOS sleep transistors and a dual threshold voltage CMOS technology is introduced .

介绍一种全部由PMOS休眠管实现的双 阈值 电压多米诺逻辑电路。

Then an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical ( QM ) effects .

给出了电子密度的隐式表达式和 阈 电压的显式表达式，它们都充分考虑了量子力学效应。

The threshold voltage of SiC Schottky barrier source / drain MOSFET

SiC肖特基源漏MOSFET的 阈值 电压

The reflectivity multi-domain structure and threshold voltage of the liquid crystal devices were studied by the reflective properties of P and FC state and the microscopic structure .

文章主要通过胆甾相液晶显示器件在P态和FC态的反射特征谱线和微观结构来研究表面性能对显示器件的反射率、多畴结构及 阈值 电压的影响。

Considering that in2-TFT pixel driving circuit and the threshold voltage of thin-film-transistor ( TFT ) influences the current in OLED 4-TFT pixel driving circuit based on polysilicon was designed .

为了消除2-TFT像素驱动电路中TFT 阈值 电压变化对OLED像素电流的影响，设计了基于多晶硅的4-TFT像素驱动电路。

Analysis of Bar Domain and Lump Domain for STN Product of High Threshold Voltage

高 阈值STN产品的条状畴和块状畴分析

As technology evolves the threshold voltage will be re-duced accordingly which results in an exponential increase of standby power .

随着工艺的发展， 器件 阈值 电压的降低，导致静态功耗呈指数形式增长。

The primary performance degradation of SOI device in the total dose irradiation is the back-channel leakage current caused by gate threshold voltage shift .

SOI（绝缘体上硅）器件在总剂量辐照下的主要性能退化是由于SOI器件的背栅 阈值 电压漂移引起的背沟道漏电。

Temperature Characteristics Model of Threshold Voltage in Small Size VDMOS

小尺寸VDMOS 阈值 电压温度特性模型