The results from the experiment show that new method can etch emitter region groove approach of magnetic sensitive transistor with high quality and high etching rates of Si and process Si of < 111 > without mask .

实验结果表明，利用这种新方法刻蚀的硅磁敏 三极 管发射区引线槽具有刻蚀速率大、质量好的优点，并且可以实现对，〈111〉晶向硅片无 掩 膜加工。