tantalum oxide

美[ˈtæntələm ˈɑkˌsaɪd]英[ˈtæntələm ˈɔksaid]

氧化钽

Examples

  • The Fabrication and Properties of Tantalum Oxide and Tantalum Nitride Films

    Ta-O及Ta-N薄膜的制备及其性能研究

  • Optical Properties of Aluminium Lanthanum Strontium Tantalum Oxide Crystal

    钽铝酸锶镧 单晶的光学性能

  • The technology and properties of Tantalum Oxide coating material have been introduced .

    介绍了 五 氧化 二 钽镀膜材料的制作工艺及材料和膜层性能。

  • The effects of tantalum concentration temperature and reaction time on the particle size and morphology and the effects of temperature and calcined time on the crystalline of tantalum oxide have been investigated .

    研究了水解过程中乙醇钽浓度、温度、加料时间对产品粒度的影响以及煅烧温度与时间对 Ta2O5晶形的影响。

  • The tantalum oxide coating material Chemical structure of HgCdTe - anodic oxide

    五 氧化二 钽镀膜材料碲镉汞阳极氧化层的化学结构分析

  • Tantalum oxide ( Ta_2O_5 ) thin film photocatalysts were prepared on single crystal Si ( 110 ) substrates via sol-gel and spin coating methods .

    利用溶胶-凝胶法和旋转镀膜法在单晶Si（110）基底上制备了 Ta 2O5光催化剂薄膜。

  • Conclusion No adverse effect of tantalum and its oxide on the exposed workers was found .

    结论未发现 钽对接触工人有不良影响。

  • A Study of Tantalum Oxide Humidity Sensitive Thin Films

    氧化 钽感湿薄膜的研究

  • An Angle-resolved TOF Study on the UV Laser Ablation of Tantalum Oxide

    角分辨飞行时间法研究紫外激光烧蚀 Ta 2O5的反应

  • Kinetics of reduction of niobium oxide and tantalum oxide in fluorine-containing slag in blast furnace smelting

    含氟高炉渣中 氧化 钽和氧化铌的还原动力学研究

  • Properties of Composite Electrode of Tantalum Oxide and Molybdenum Nitride

    氮化钼与 五 氧化 二 钽复合电极性能的研究

  • XRD results show that the anatase phase of titanium dioxide films can be fabricated at 400 ℃ and at this temperature the deposited tantalum oxide and silicon dioxide were amorphous .

    对制备的薄膜进行XRD测试表明，在基片温度为400℃时能制备出TiO2薄膜晶体，结构为锐钛矿型，而在此温度下，SiO2和 Ta2O5却只能得到非晶态的结构。

  • I-V characteristics of high dielectric constant tantalum oxide films

    五 氧化 二 钽薄膜的I&V特性

  • The porous aluminum oxide and the barrier aluminum oxide as the cathode substrate respectively the tantalum piece as the anode used the direct current electrodeposition method in the bromine acetone solution has prepared the high dielectric properties nano-composite oxide film for the first time .

    本文首次采用电化学沉积方法，分别以多孔型氧化铝和壁垒型氧化铝基体作阴极， 钽片作阳极，在溴的丙酮溶液中采用直流电沉积方法，制备了高介电性能纳米复合阳极 氧化膜。

  • Tantalum oxide and tantalum nitride films with different composition microstructure physical and mechanical properties fabricated by unbalanced magnetron sputtering were investigated in this paper .

    本论文采用非平衡磁控溅射技术制备出不同成分、结构、物理性能和力学性能的 Ta-O和Ta-N薄膜。

  • Tantalum oxide has proven to be an effective photocatalyst owing to its broad band gap and good chemical resistance .

    作为一种新型的光催化材料， 五 氧化 二 钽（ Ta2O5）以其禁带宽度大、化学稳定性好等特点引起了人们广泛的关注。

  • The microstructure of tantalum oxide film was analyzed by Atomic Force Microscope and Transmitting Electron Microscope . The I U characteristics of the MIM thin film diode were also measured .

    用原子力显微镜和透射电子显微镜分析了 Ta2O5膜的微结构，测试了MIM薄膜二极管的IU特性曲线。

  • A mineral consisting of tantalum oxide of iron and manganese that occurs with niobite or in coarse granite ; an ore of tantalum .

    一种由铁和锰的 钽 氧化物组成的矿物，与铌铁矿共生，亦见于粗糙的花岗岩中，是一种钽矿石。

  • Tantalum oxide thin films were deposited by reactive DC magnetron Sputtering from a tantalum target in Ar-O2 mixture .

    在Ar-O2混合气氛中采用直流磁控反应溅射沉积制得了 氧化 钽薄膜。

  • The Research Progress of High Dielectric Constant Tantalum Oxide Films as MOSFET-gate

    五 氧化二 钽高K薄膜作为MOSFET绝缘栅研究

  • The dielectric performance indicated that the tantalum anode dissolves deposit in the porous surface and the porous internal bonds with the porous oxide film by a nanometer size .

    电性能研究表明多孔型 氧化铝作基体进行电沉积时， 钽阳极溶解部分在多孔膜表面及多孔内部都有沉积，且以纳米尺寸与多孔 氧化膜 复合。

  • Forming process of anodic Ta_2O_5 dielectric film of wet tantalum electrolytic capacitors was analyzed and the microprocess of electrolyte sparking and the oxide film breakdown were studied .

    叙述了 钽电解电容器阳极Ta2O5介质膜的形成过程，分析了电解液闪火与 氧化膜击穿的微观过程。

  • Production of Ultra-pure Tantalum Oxide / Ultra-pure Niobium Oxide from CH_3 ( CH_2 ) _5CHOHCH_3-HF-H_2SO_4 System

    仲辛醇-HF-H2SO4体系制取超高纯 氧化 钽和超高纯 氧化铌

  • Besides the influence of crystal structure the better stability of zirconium oxide and tantalum oxide can improve the chemical and thermal stability of ITO films .

    除了晶体结构的影响之外，稳定性较好的氧化锆和 氧化 钽也提高了薄膜的化学稳定性和热稳定性。

  • Iridium - Tantalum Oxide Anode Coatings

    铱 钽 氧化物阳极涂层的研究

  • Determination of impurity in high purity tantalum and its oxide by ICP-AES after trace-matrix separation

    分离基体ICP-AES法测定高纯 钽及其 氧化物中杂质元素