Growth of Tantalum Pentoxide Films and Its Current Voltage Characteristics

五 氧化 二 钽薄膜的制备及其I-U特性

XPS Analysis of Tantalum Pentoxide Thin Films Formed by Using Excimer UV Lamp

Excimer紫外灯 辐照 法 钽 氧化物膜XPS分析

The mechanism study of carbon reduction process of tantalum pentoxide

五 氧化 二 钽碳还原过程的机理研究

Tantalum Pentoxide ( Ta2O5 ) films were prepared by pulsed DC reactive magnetron sputtering method .

采用直流脉冲反应磁控溅射方法制备了高介电常数 五 氧化 二 钽（Ta2O5）薄膜。

A method in which the matrix was matched to calibration curve has been proposed for the direct determination of 13 trace impurities in high-purity tantalum pentoxide by ICP-AES .

本文提出了基体匹配校准曲线，ICP-AES法直接测定高纯 氧化 钽中13种杂质元素的分析方法，并 考察了光谱干扰以及基体 效应的影响，确定了仪器最佳工作条件。

By using a two-stage carbon reduction process Cr ~ ( 6 + ) may be effectively reduced to Cr ~ ( 3 + ) or even metallic Cr. THE MECHANISM STUDY OF CARBON REDUCTION PROCESS OF TANTALUM PENTOXIDE

利用C和CO的还原性，能有效地将Cr6+还原成Cr3+或者金属Cr. 五 氧化 二 钽碳还原过程的机理研究

Pretreatment Method for the Determination of Trace Fluoride Chloride and Sulfate in Tantalum Pentoxide and Columbium Pentoxide by Ion Chromatography

离子色谱法测定五氧化二铌和五氧化二 钽中痕量氟氯和硫酸根离子的前处理方法

Determination of 13 Trace Impurities in High-Purity Tantalum Pentoxide by ICP-AES

ICP-AES测定高纯 氧化 钽中13种杂质元素