Kinds of high-performance BiCMOS tristate logic gates have been designed and some new methods of modifying the gate structure and using optimal device parameters have been also proposed by adopting 0.35 μ m process technology .

采用0.35μMBiCMOS工艺技术，设计了 三种高性能的 BiCMOS 三 态逻辑门电路，并提出了改进 三态门电路结构和优化 器件参数的方法和措施。