High-quality GaAs epilayer is obtained by employing the technologies of the tilted Si substrate optimization the low temperature Al ( GaAs ) As buffer layer and thermal cycle annealing .
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Wastewater from a pharmaceutical factory preparing traditional Chinese medicines was used as substrate . While degradation of substrate by IC ( Intermittent Cycle ) technology was examined the ability of biological removal of phosphorus and nitrogen technological conditions and mechanism were also studied .
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However cracks initialized in the diffusion layer between substrate and bond coat when TBCs were tested with low cycle fatigue at high temperature .
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The oxidation protection for commercially obtained fused mullite coating on SiC-coated C / C substrate of high density comparatively offered an effective protection than the low density substrate after 106-h of isothermal oxidation cycle at 1500 u2103 .
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底物循环