Tantalum oxide and tantalum nitride films with different composition microstructure physical and mechanical properties fabricated by unbalanced magnetron sputtering were investigated in this paper .
本论文采用非平衡磁控溅射技术制备出不同成分、结构、物理性能和力学性能的 Ta-O 和 Ta-N薄膜。
Atomic ratio determination of tantalum nitride foil by transmissive scattering
穿透散射法测定 氮化 钽薄膜的原子比
Properties of Composite Electrode of Tantalum Oxide and Molybdenum Nitride
氮化钼与 五氧化二 钽复合电极性能的研究
SYSTEM The working point can be defined by analyzing thermal coefficient of tantalum nitride resistors .
对电阻温度系数 ( TCR)的分析可确定溅射系统的工作点。
The Fabrication and Properties of Tantalum Oxide and Tantalum Nitride Films
Ta-O及 Ta-N薄膜的制备及其性能研究
Study on the stability of tantalum nitride thin film
氮化 钽薄膜稳定性的研究
The hardness of the tantalum nitride film is greatly influenced by N2 partial pressure .
氮分压对 氮化 钽薄膜的硬度影响较大。
美[ˈtæntələm ˈnaɪˌtraɪd]英[ˈtæntələm ˈnaitraid]
氮化钽,一氮化钽