Double crystal X ray rocking curve showed good crystal quality of pseudomorphic high electron mobility transistor ( PHEMT ) structure grown on it .

X射线 双晶摇摆曲线分析证明材料 结构完整，晶体质量良好。

This paper presents the experimental results of a silicon pulsed power transistor with self-aligned T-shaped electrode structure .

报道了一种自对准T形电极 结构的硅脉冲功率 晶体管实验结果。

The article introduces the development process of the complex transistor of high impedance including the design of structure parameter artwork layout and the development result .

本文介绍了高阻抗复合 管的研制过程，包括 结构多数的设计，工艺设计，以及研制结果。

FD-SOI is one of several options competing for the next-generation transistor structure .

FD-SOI是下一代 晶体管 结构的热门技术之一。

With high power MOSFET transistor balanced amplification structure and optimum design on computer simulation software the paper provides a full-band amplifier in 1.5 ~ 30 MHz with low noise and high dynamic characteristics .

利用大功率的MOSFET 晶体管，采用平衡放大 结构，并通过计算机仿真软件优化设计，实现了一个1.5~30MHz全频段的低噪声、大动态的短波放大器。

No remarkable resonance peak limiting factor in laser diodes is observed during this modification in transistor laser structure .

谐振峰是限制激光二极管性能的因素之一，而在这种 晶体管激光器 结构中，没有观察到明显的谐振峰。

On courseware making of transistor structure and amplifying principles

《 晶体 三极 管 的 结构及其放大原理》课件制作例谈

The method can be utilized for transistor laser structure design .

该方法可用于 晶体管 激光器的设计。

Based on the Ion-Sensitive Field Effect Transistor structure and electro-characteristic a pH-ISFET has a multi-layer floating electrode structure realized in standard CMOS technology is presented .

基于离子敏感场效应 晶体管（ISFET）基本 结构及其电学特性，提出了一种应用标准CMOS工艺实现的多层浮栅结构pH-ISFET。

Parallel connected Darlington transistor and power resistor are used as basic structure for analog load . The Hall current sensor is used to detect strong current .

模拟负载采用了并 联达林顿 管与功率电阻连接的模拟电子负载 结构 形式，对大电流的检测使用了霍尔电流传感器。

Study on Characteristics of Ferroelectric Field Effect Transistor with Pt / PZT / Pt Structure

Pt/PZT/Pt 结构铁电场效应 晶体管性能研究

Due to the important position of termination design in power transistor design the termination structure applied widely was studied and its advantage and defect were compared .

鉴于终端设计在功率 晶体管设计中的重要地位，本文主要对目前广泛应用的终端 结构的研究，探讨它们的优缺点。

In the fabrication of integrated circuits ( IC ) the transistor is basic device and its self-aligned structure and process formation technology of gate and source / drain is the key part of IC manufacturing .

在集成电路制造领域， 晶体管 是 电路中应用最主要的器件之一，而它的自对准源漏栅工艺是晶体管制造的关键。

Firstly the Bi-CMOS bipolar transistor layout structure is analysed and the operation principle is studied . Thus the design method for making a high performance Bi-CMOS bipolar transistor is given with standard CMOS process .

首先通过对Bi-CMOS双极型 晶体管版图 结构的分析，探讨了工作机理，阐明了采用标准CMOS工艺制作高性能Bi-CMOS双极型晶体管的设计方法。

In this paper the work is introduced on investigation on non classical CMOS structure in the quest to find the ultimate transistor structure that will permit evolutionary improvements of the existing CMOS technology base .

主要介绍了对各种非典型CMOS结构的研究，从而寻求最终 的 结构模式适应不断变化的CMOS发展技术。

To show the potential advantages in high frequeucy and low noise performances an Npn GaAs transistor with a fine structure as an example is proposed .

给出了一个细线条 结构的NpnGaAs 晶体管作为进一步考察高频和噪声性能的实例。

Amorphous Silicon Thin Film Transistor Structure for Effectively Suppressing Backlight Illumination Effect

一 种能有效抑制背光照影响的非晶硅薄膜 晶体管

Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor . A structure of a sub-100 nm base width silicon transistor has been described in this paper .

禁带宽度和少子复合寿命是硅 晶体管发射区中重要的物理参数。本文描述了一种实现亚100nm基区宽度的晶体管 结构。

First according to the actual organic static induction transistor establishing the physical model and selecting appropriate structure parameters solves poisson 's equation by adopting finite element method .

首先根据实际制作的有机静电感应 三极 管建立物理模型，选取合适的 结构参数，采用有限元法求解泊松方程。

This paper introduces an optimum design method for Darlington power transistor structure consisting of VDMOS and bipolar transistor and technological parameters . Also the design model is established .

提出了VDMOS和双极晶体管复合而成的达林顿功率 晶体管 结构和工艺参数的优化设计方法，建立了设计模型。

The transistor voltage regulators have advantages of simple structure high reliability and low cost . However the problem of large steady voltage error exists in most transistor voltage regulators .

晶体管 型电压调节器具有 结构简单、工作可靠及成本低等优点，但现有的电压调节器普遍存在稳态电压调节精度不高的问题。

A C-band InGaP / GaAs HBT power transistor with an optimized material structure and device peripheral structure is designed and fabricated by base-emitter metal self-aligning emitter ballasting and an electric plated air bridge .

通过优化InGaP/GaAs异质结双极 晶体管（HBT）的材料 结构和器件结构，采用BE金属自对准、发射极镇流和电镀空气桥等工艺技术，研制了C波段InGaP/GaAsHBT功率 管。

The n-InGaP / p-GaAs / n-GaAs negative differential resistance heterojunction bipolar transistor with resistive gate structure ( RGNDRHBT ) is designed and fabricated successfully .

设计并研制成功了具有电阻栅 结构的n-InGaP/p-GaAs/n-GaAs负阻异质结双极 晶体管。

Multi-threshold periodic transmitting function can be achieved by using a complementary single-electron transistor structure which can be used to simplify the analog-to-digital ( A / D ) converter .

用互补 SET对 结构实现了多阈值周期性传输功能，这可以用来简化AD转换电路。

This paper analyses the influence of hot carrier 's retrogradation on integrated circuit 's reliability and studies computer simulator technology quasi-constant voltage theory MOS transistor of LDD structure for the prevention of hot carrier retrogradation .

分析了热载流子退化现象对集成电路可靠性的影响，研究了改善热载流子退化的计算机工艺模拟技术、按比例缩小的准恒定电压理论、LDD 结构MOS 晶体管。

As electronic device dimensions approach nanometer scale quantum effects become especially and increasingly important for device operation and the transistor structure with new mechanism needs to be adopted . The single-electron transistor ( SET ) is a typical example of such a structure .

当电子器件的尺寸接近纳米尺度时，量子效应对器件工作的影响变得格外重要，就需要采用具有新机理的 晶体管 结构，单电子晶体管（SET）就是其中一个典型的结构。

A GaAs-based resonant tunneling transistor with a gate structure ( GRTT ) has been designed and fabricated successfully for the first time in mainland China .

在研制RTD经验的基础上设计并研制成功栅型GaAs基共振隧穿 晶体管（ GRTT）。

InSb films are widely used in optoelectronic components reluctance components Hall element and transistor structure devices .

InSb薄膜被广泛应用于光电元件、磁阻元件、霍尔元件以及 晶体管 结构器件之中。

The static induction transistor with Schottky gate and sandwich structure of Au / CuPc / Al / CuPc / Au using organic semiconductor material copper phthalocyanine was discussed .

介绍了由有机半导体材料酞菁铜制作的具有Au/CuPc/Al/CuPc/Au三明治 结构的肖特基型栅极有机静电感应 三极 管。

The amorphous silicon thin film transistor ( a-Si : H TFT ) structure for effectively suppressing backlight illumination effect is proposed in this paper .

提出一种能有效抑制背光照影响的非晶硅薄膜 晶体管（a-Si：HTFT） 结构。