The high detection efficiency in the ion trap system implies that the mixed state geometric phases proposed here can be easily tested .

囚禁离子的高效检测性意味着本文所研究的混合 态几何相位能够被验证。

On the contrary When collective consciousness makes turbulence the body and mind will trap in a state of unhealthiness unhappiness and unpleasure .

相反的，当意识不和谐时，身心就处在不健康、不幸的、不 喜悦 的 状态。

The bulk trap state exists in interface of ZnO varistor and the interfacial electronic transport of ZnO varistor can be interpreted by double Schottky barrier model with correction of carrier bulk trap state .

价电子谱发现：室温下仅纯ZnO费米能级附近有载流子分布，这表明：压敏电阻界面有 陷阱 态，氧化锌压敏电阻界面电输运特性需用载流子陷阱对双肖特基势垒进行补充。

Using Ion Trap to Prepare and Measure the Quantum State

利用离子 阱制备与测量量子 态

In this paper we present the experimental methods to determine the trap parameters in the silicon bulk from non-steady state ⅰ - ⅴ characteristics on NOS structures .

本文报导了从MOS结构非 稳态Ⅰ-Ⅴ特性求得硅体 陷阱参数的实验方法。

Low-level Trap in China s Agriculture & A Super-stable State

我国农业的低水平 陷井：一种超 稳态

Important registers to look for when debugging through signals are the GPRs instruction pointer ( NIP ) machine state register ( MSR ) trap data address register ( DAR ) and so on .

在调试信号时，需要查看的一些重要寄存器包括GPR、指令指针（NIP）、机器 状态寄存器（MSR）、 Trap、数据地址寄存器（DAR）等等。

Use the ion trap system to design phase covariant quantum real state quantum cloning machine .

利用离子 阱系统设计实现相位协变与实数 态量子克隆的方案。

Consider three two-level ion is bound in a linear ion trap this paper proposes the scheme can perform the phase covariant quantum cloning and real state quantum cloning experiments in this paper . 5 .

本论文中，考虑3个两能级的离子被束缚在一个线性离子 阱中，设计了可以实现相位协变量子克隆和实数 态量子克隆的实验方案。

A composite trap evaluation method for oil pool formed by active and quiet state factors

圈闭成藏动、 静态综合评价法

The measurements of the trap parameters in the silicon bulk from non-steady state I-V characteristics on MOS Structures

从MOS非 稳态Ⅰ-Ⅴ特性测量硅体 陷阱参数

An effective way of decreasing bulk electron trap density and interface state density is put forward .

提出降低体电子 陷阱密度和界面 态密度的有效途径。

The results demonstrated that the Ohmic contact annealing is one of the most important factors that have an influence on the density of interface traps the time constants and the trap state energy of AlGaN / AlN / GaN heterostructures .

研究结果表明，欧姆接触退火导致的金属原子扩散是影响界面陷阱态密度、时间常数及 陷阱 态能级等参数的重要因素。

Study on the Trap State of BaTiO_3 Semiconducting Ceramics On Network State Equation

钛酸钡PTC热敏电阻陶瓷表面 态浅析网络状态方程研究

Stress field is the power of structural deformation and movement which causes the change of geologic environment trap conditions and stress state .

引起地质环境、 圈闭条件、应力 状态改变的动力是构造应力场。