The electric performance of the single-electron devices under the influence of such structural parameters as the tunnel junction capacitance and resistance and the working parameters such as magnitude of voltage pulse and temperature have bene investigated .

详细考察了 隧道 结电阻、电容以及 器件 结构布局等结构参数和电源电压、温度等工作参数对单电子器件电学性能的影响。

The Study of Structure and Character of Ferromagnetic Tunnel Junction and Granular Films

隧道 结和颗粒膜结构与性质研究

An electronic analog model to simulate the properties of Josephson tunnel junction is described in this paper .

本文考虑了各项隧道电流，以一个相位锁定环路模拟约瑟夫逊 隧道 结。

Using free-electronic approximation method the property of magnetoresistance of magnetic tunnel junction with nonmagnetic metal interlayer is researched and the role of nonmagnetic metal interlayer in increasing the magnetoresistance is discussed in theory .

用自由电子近似方法对具有非磁金属中间层的磁性 隧道 结的磁电阻进行了研究，从理论上讨论了非磁金属中间层对磁电阻的影响。

Interlayer Exchange Coupling in Ferromagnet / Insulator ( Semiconductor ) / Ferromagnet Tunnel Junction

铁磁体/绝缘体（半导体）/铁磁体型 隧道 结中的层间交换耦合

Electronic transport properties of the multilayer structure double spin-filter tunnel junction

多层结构双自旋过滤 隧道 结中的电子输运特性

Research on Electromagnetic Character of Magnetic Tunnel Junction

磁性 隧道 结电磁特性的研究

A resonant Josephson tunnel junction directly coupled to the microstrip transmission line

一种直接和微带传输线耦合的谐振型Josephson 隧道 结

Surface roughness study of light-emitting tunnel junction with scanning tunnelling microscope

发光 隧道 结表面粗糙度的隧道显微镜研究

The master equation of the single electron triple barrier tunnel junction ( TBTJ ) model is developed based on the orthodox theory .

在正统理论的基础上，提出了单电子三势垒 隧穿 结模型的主方程，并用线性方程组解法求出了其稳态解。

Discontinuities of the slope of the curve at the flat form of Coulomb staircase compared to double barrier tunnel junction system which is caused by the change of the electron numbers on the second Coulomb island are found .

发现其有别于双势垒 隧 穿 结的情况，在传统库仑台阶的平台处曲线存在波纹状结构，分析得出这是由于第二个库仑岛上的电子数变化对IV曲线的影响。

This paper reports the process for fabricating Nb / Al-AlO_x / Nb tunnel junction using rf-magnetron sputtering . The S-I-S sandwich structure is prepared without breaking vacuum .

本文报道了在射频磁控溅射装置上Nb/Al-AlOx/Nb 隧道 结的制备工艺和所获得的结果。

We have studied the I ( V ) characteristics of a superconducting nonequilibrium tunnel junction using the kinetic equation approach . The theoretical calculations are in good agreement with the experimental results .

本文利用动力学方程研究了超导非平衡 隧道 结的I（V）特性，理论计算结果与 双 隧道 结实验的测量结果能够很好符合。

We have developed a method that uses a magnetic double barrier tunnel junction to study spin flip scattering in nanometer sized spacer layers near the ballistic limit .

文章作者提出了一种使用双势垒磁性 隧道 结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法。

Dc and rf current driven superconducting tunnel junction is investigated with the electronic simulator which correctly simulates all the currents through a superconducting tunnel junction .

本文利用全电流超导隧道结电子模拟器研究了dc与rf电流激励超导 隧道 结。

We introduce LB film into such structure to form a new hopeful tunnel junction with good room temperature light-emission stability .

我们还在这种 隧道 结结构中引入了LB膜，构成了一种室温性能较好、很有前景的发光 隧道 结新结构。

The current-phase relation of the superconductive tunnel junction can be derived from the TDGL equations with definite boundary conditions by using a perturbation treatment .

超导 隧道 结的电流和位相满足TDGL方程和一定的边界条件，并可用微扰的方法来求解。

Spin-polarized transport in ferromagnet / half-metal / ferromagnet tunnel junction

铁磁/半金属/铁磁 隧道 结中的自旋极化输运

The characteristic of heavy doping level of tunnel junction and diffusion each other is investigated by means of Hall technique X ray diffraction technique and SIMS .

利用霍耳测试仪、X射线双晶衍射仪、二次离子质谱仪，对 隧道 结的重掺杂和互扩散特性进行了研究。

In Chapter Two by adopting a semiclassical model we get an analytic expression of potential distribution in a one-dimensional mesoscopic tunnel junction array by solving a set of linear equations .

第二章采用半经典模型，通过求解一个线性方程组得到了一维 介观链中电势分布的解析表达式。

Tunneling Time in FM / I / FM Tunnel Junction

FM/I/FM 隧道 结中的隧穿时间

Preparation and study of nb / α si / nb tunnel junction

Nb/αSi/Nb 隧道 结的制备与研究

Studies of periodic subharmonic and chaos phenomena in the RF-BIASED superconducting tunnel junction

rf-偏置超导 隧道 结的周期次谐波和混沌现象研究

At each intersection a magnetic tunnel junction ( MTJ ) is created that serves as a switch-and thus as a repository for a single bit of memory .

这样，在每个交叉点就产生一个充当开关的磁 隧道 结（MTJ）

The latest research progress on giant magnetoresistance materials with tunnel junctions including the multi-layered films nano-particulate films and polycrystalline bulk materials that have been developed in recent years are reviewed on the basis of an overview of the tunnel junction magnetoresistance effect and its mechanism .

在概述 隧道 结巨磁电阻效应及其机理的基础上，综合介绍了多层薄膜结构、微颗粒膜结构和近年来出现的基于多晶隧道结结构的巨磁电阻效应及其相关材料的研究最新进展。

Based on the theory of waveguide mode and the theory of non-paraxial vectorial moment the beam quality of TE 0 mode propagating in InGaAs / GaAs / AlGaAs semiconductor laser cascaded by tunnel junction is studied .

运用波导模式理论和光束传输的非傍轴矢量矩理论，对 隧道级联 InGaAs/GaAs/AlGaAs半导体激光器的光束质量进行了理论研究。

The Research of Multi-layer Structure MIM Light-emission Tunnel Junction

多层膜结构MIM 隧道发光 结的研究

Electron transference and light emission of MIM tunnel junction

MIM 隧道 结的电子输运 特性和发光研究

The influence of interfacial magnetoelectric coupling on multi-resistive-states tunnel junction with different electrodes in Thomas-Fermi screening lengths is studied in ferromagnetic-ferroelectric-ferromagnetic tunnel junction .

以铁磁-铁电-铁磁结构隧道结模型为研究对象，选择具有不同托马斯-费米电荷屏蔽长度的电极材料，探讨了影响多阻态 隧道 结界面磁电耦合强度的主要因素。

By placing a single C_ 59N molecule in a double-barrier tunnel junction we have realized a new type of single molecule rectifier device based on the single electron tunneling effect and the special electronic structure of the C_ 59N molecule .

通过将单个C59N分子置于双势垒 隧道 结中，从而利用单电子隧穿效应和C59N分子的特殊能级结构，我们成功地实现了一种新型的单分子整流器件。