Influence of some factors such as interface states surface roughness and so on on the mobility is investigated using the model .

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Polymer microspheres have characteristics of small size large specific surface area high diffusion and mobility and good homogeneity and diversity .

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Effect of interface states lattice ionized impurities and surface roughness scatterings on the mobility is considered in this model where the interface-state scattering mechanism includes electrically-shielded effect of carriers .

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Theoretical calculation and analysis of rectangular surface mobility

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Problem for two-dimension exciting are investigated . In view of the situation in infinite plate with rectangular excitation surface mobility is defined .

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Firstly the loads on the foundation were obtained based on the surface mobility and the foundation experiment data then the vibration and sound radiation of the structure were calculated by FEM and BEM respectively .

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Three methods for measuring semiconductor surface mobility are given in this article .

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On the basis of terrain feature of lunar surface evaluation parameters of mobility performance are presented corresponding to motion conditions of exploration rover .

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Gears Educational Systems builds a Surface Mobility Platform that schools can use as the basis for robot projects .

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According to regional differentiation heat balance of surface water mobility and transfer of elements and properties of ecological environment they complete various natural divisions ecological environment divisions agricultural and economic divisions that are widely applied in the national economy .

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METHODS : The changes of cell surface charge were observed by the electrophoresis mobility .

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Study on the Surface Mobility of Atoms on the Single Crystal Plane of Metal by the Field Emission Fluctuation Method

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When the compression rate increases the extremum of surface subsidence levels of mobility tilt value and deformation will linearly increase .

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Measurement of rectangular surface mobility for an infinite plate

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Due to its high surface area excellent electrical conductivity and electron mobility at room temperature robust mechanical properties and flexibility graphene is an ideal material for the preparation of electrochemical sensors and biosensors .

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In this paper the unconstant surface mobility effect of MOSFET in the wide temperature range from 27 u2103 to 300 u2103 is deeply studied on the base of investigation of the high temperature models of fundamental physical parameters in silicon and the fundamental characteristics of the MOSFET .

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They have given out several experiential formulae and equations of high-temperature electrical characteristics about the threshold voltage surface mobility of carriers sub-threshold current drain current and leakage current variations under 25 ~ 300 u2103 .

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An appropriate laser energy leads the incident atoms to have a high surface mobility and the quality of the film can be improved .

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Thus the growth of diamond single crystals seems to be disturbed either by too high hydrocarbon supersaturation or by less atomic hydrogen or by a decreasing surface mobility of the growth species .

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The sheet resistance carrier surface density mobility and carrier concentration of surface layer in Si diffused at high temperature with high concentration of boron and phosphorus after CW-CO2 laser irradiation have been measured .

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To determine the influence of electrostatic interactions on bacterial adhesion to meat we studied surface charges by electrophoretic mobility .

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The involvement of deep lithospheric layers into geological processes in the surface is the reflection of regional crustal mobility .

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We represent a temperature model of surface carrier mobility of short channel MOST after thinking about kinds of dispersion effect .

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The growth rate composition and structure of the film will be affected by the chang of the kinetic energy and the surface mobility of the adatoms with the different gas pressures .

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The predicted growth rate of sintering neck and sintering rate for different ratios of grain boundary to surface mobility are consistent with the existing theoretical analysis .

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The relationship between semiconductor surface mobility and gate voltage is obtained by the experiment .

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The Influence of Boron Ion Implanted Annealing Process on Surface Mobility and Sheet Resistance

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It is believed as far that generally there are two origins of 1 / f noise which includes surface states and mobility fluctuation of free carriers as bulk effect .

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The surface mobility of finite plate structure

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The Unconstant Surface Mobility Effect of MOSFET in the Wide Temperature Range

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