The paper analyzes the reasons of producing pulse spike in the experiment of measuring thermal conductivity of poor conductor by flash method . The experimental apparatus and data acquisition method are designed in order to reduce and eliminate the disturbance of pulse spike .

分析了用闪光法测定不良导体 热导率实验中脉冲尖峰产生的原因，并在实验装置和数据处理方面设计了减小和消除 脉冲干扰的方法。

The results show that no matter the range of the implanted ion itself or secondary effect sphere of secondary electrons radical diffusion thermal spike cascade atoms and shock wave etc.

结果表明：无论是注入离子本身的射程，还是次级电子、自由基扩散、 高温 热 穗、级联原子和冲击波等次级作用范围都无法触及表皮下面的胚细胞。

It means that Bi implantation of Inp is thermal spike i.e.high temperature regions were formed in the volume of ion cascade .

该值表明铋注入InP的过程是 热 峰效应的过程（即入射离子在注入碰撞区域内形成了局部的高温区）。

The initial size of the thermal spike region obtained from the modified model is consistent with the energy deposition theory .

将计算所得到的平均能量淀积密度代入修正后的Sig-mund 热 尖峰溅射模型中，所得到的起始 热 尖峰区尺寸与能量淀积理论相容。

The thermal spike was proportional to disease severity .

手足 口病患儿 热 峰与病情的严重程度成正比。

Application of the thermal spike model to amorphous latent tracks in polycarbonate

热 峰模型在聚碳酸酯非晶化潜径迹中的应用

These results show that the ion beam mixing mechanism of Mo / Si system is not vacancy diffusion and intra-cascade interstitial diffusion and the thermal spike model also does not apply .

结果表明，以前的空位扩散机制、单级联间隙原子扩散机制和 热 峰模型都不能解释Mo/Si体系的离子束混合。

Sigmund 's thermal spike sputtering model has been modified by replacing the surface energy deposition density in Sigmund 's model with average energy deposition density .

对Singmund 热 尖峰溅射模型进行了修正.用平均能量淀积密度近似代替了Singmund热 尖峰溅射模型中的表面能量淀积密度近似。

The results were discussed according to the influence of skew incidence angle on atomic mixing thermal spike internal stress and the formation of metastable structures .

从理论上讨论了离子束入射角度对原子混合、 热 峰 效应、薄膜内应力及亚稳结构形成的影响。