The composite materials ( SBA15 ) - ( DBC-ASA ) were characterized by X-ray diffraction ( XRD ) Fourier transform infrared ( FTIR ) spectra solid state diffuse reflectance absorption spectra and luminescence studies .

用粉末 X 射线衍射、Fourier变换红外光谱、固体扩散漫反射吸收光谱及 发光研究表征了所制得的复合材料（SBA15）-（DBC-ASA）的性质。

By means of powder X-ray diffraction infrared spectroscopy solid state diffuse reflectance absorption spectroscopy and luminescence studies the successful incorporation of guest into the host was characterized .

利用粉末 XRO、IR、固体扩散漫反射吸收光谱、 发光研究等方法表征了客体在分子筛主体中的成功组装。

By means of chemical analysis powder X-ray diffraction Fourier transform infrared spectroscopy low-temperature nitrogen adsorption-desorption technique solid state diffuse reflectance absorption spectroscopy and luminescence studies the prepared materials were characterized .

采用化学分析、粉末 XRD、傅里叶变换红外光谱、低温N2吸附-解吸附技术、固体扩散漫反射吸收光谱和 发光研究表征了制备的材料。

The samples were characterized by X-ray diffraction ( XRD ) Scanning electronic microscope ( SEM ) photoluminescence ( PL ) and X-ray excited luminescence ( XEL ) spectra .

分别以X-射线衍射（XRD）、扫描电子显微镜（SEM）、光致发光（PL）光谱及 X- 射线激发的 发光（XEL）光谱对样品进行了表征。

In this paper X-ray excited luminescence thermoluminescence and photoluminescence have been investigated for La ~ ( 3 + ) - doped PbWO_ ( 4 ) .

探讨了不同浓度La3+掺杂对于钨酸铅晶体发光性能的影响，如热释光、 X 射线激发 发光、光致发光等。

Measurements of X-ray diffraction ( XRD ) X-ray photoelectron spectroscopy ( XPS ) and luminescence brightness are made for alternating current electroluminescent ( ACEL ) zinc sulfide thin film doped with erbium .

对研制的掺铒硫化锌交流电致发光薄膜，进行了表面的X射线衍射（XRD）、 X 射线光电子能谱（XPS）及 发光亮度测量。

Many studies have been done on different approaches studied the density of threading dislocations of GaN such as Transmission electron microscopy ( TEM ) X-ray diffraction ( XRD ) but the results which measured by these approaches are not consistency with luminescence .

国内外许多研究小组利用透射电子显微术和 X 射线衍射对GaN薄膜位错的研究集中在用不同的测试方法对位错密度的分析，但通过这些方法表征的位错密度与 器件 发光 性能存在 矛盾。

In the study of cerium activate the strontium aluminate the X-ray diffraction icon and SEM photo are listed the concentration of cerium that influence the luminescence are discussed .

在铈激活的铝酸锶基质中，我们给出了 发光 体 的 X 射线衍射图和SEM图，并讨论了铈的浓度对合成 物 发光性的影响。

X-ray absorption fine structures ( XAFS ) and X-ray excited optical luminescence ( XEOL ) at the Si K and Si L3 edge have been used to investigate the optoelectronic properties of Silicon nanowires .

采用X射线吸收精细结构谱（XAFS）和 X 射线激发 发光谱（XEOL），在Si的K边和L3边研究了硅纳米线的光电特性。

By using the X-ray diffraction ( XRD ) high resolution transmission electron microscopy ( HRTEM ) and fluorescence spectrophotometer the structural morphological and luminescence properties of the nanocrystal were investigated .

用 X 射线衍射仪（XRD）、高分辨透射电子显微镜（HRTEM）和荧光光谱仪分别对样品的结构、形貌和 发光性能进行了研究。

X-ray excited luminescence features of the crystal were also measured and the emission bands correspond to the transition from charge transfer state to the ground and excited state of Yb 3 + ion .

测试了Yb：YAG晶体的 X 射线 荧光，发光峰对应于电荷迁移态到Yb3+离子的基态、激光态间的跃迁。

A X-Ray Absorption Spectroscopy and X-Ray Excited Optical Luminescence Study of Silicon Nanowires

硅纳米线的X射线吸收谱与 X 射线激发 发光 谱研究