The Effect of Non-Steady-State Bulk-Generation on the Transient Response of MOS-C to Linear Voltage Sweep
线性 电压 扫描MOS电容C-t瞬态中的非稳态体产生效应
A new rapid method for determining bulk generation lifetime and surface genera-tion velocity is suggested on the basis of the analysis of a MOS capacitance C-t tran-sient response to a linear voltage sweep .
本文分析了线性 电压 扫描下MOS电容的C-t瞬态响应，在此基础上，发展了一种快速确定体产生寿命和表面产生速度的新方法。
On the basis of this a method of using twice sweep under different voltage sweep rates for determining both bulk generation lifetime and surface generation velocity is proposed .
在此基础上，建议了一种通过两次不同 电压 扫描率的 线性电压扫描来测定半导体的体产生寿命和表面产生速度的方法。
The experimental results show that for the same MOS capacitor sample the obtained values of generation lifetime from varying association of voltage sweep rates are close each other .
实验结果表明，对于同一个MOS电容器样品，从不同 电压 扫描率组合得到的产生寿命值基本一致。
DDS technology is used to produce sweep frequency signal which drives power switching devices to switch DC voltage to produce sweep frequency rectangular wave .
使用DDS技术产生频率扫描信号，控制功率开关器件对直流 高压高速开关，产生频率 扫描的矩形波。
After analyzed the effect of preload voltage and sweep voltage on the negative electrostatic spring stiffness a method to dissociate mechanical stiffness from the system stiffness has been provided .
通过分析预载 电压 和 扫 频信号幅值对静电负刚度的影响，提出了从系统刚度中分离出挠性梁机械刚度的计算方法。
In this paper the general method of treatment is given and the results of I / V characteristics at several voltage sweep rates are shown . The comparison with the results of previous model is also made .
文中除了给出一般的处理方法以外，还给出了几种不同 电压 扫描率下I/V特性的计算结果，并与已往的模型作了比较。
These tubes can be eliminated in a single voltage sweep resulting in a high rectification array device .
通过一个单向的 电压 扫描过程可以除掉这些金属碳纳米管，从而得到一个拥有高整流率的碳纳米管阵列器件。
Image processing method is used to carry out frequency sweep and voltage sweep measurement . The in-plane motion characteristic of MEMS is obtained and the testing results are analyzed and discussed .
利用图像处理方法对MEMS谐振器做扫频和 扫 压测量，获得了MEMS器件的平面微运动特性，并对测量结果进行了分析和讨论。
Simulate the avalanche circuit in series with PSPICE module design the high voltage short plus generation circuit by avalanche transistor in series for the sweep deflection circuit of streak camera .
运用PSPICE模型对串联雪崩电路进行了仿真，设计出了用雪崩三极管串联的 高压短脉冲产生电路，该电路可以用于条纹相机中的 扫描电路。
A Study of Bootstrap Voltage Sweep Circuit
对一种自举式 扫描 电压电路之探讨
Application of high voltage NON-AVALANCHE transistors to sweep circuit in streak camera
高压功率晶体管在 扫描相机中的应用
Determination of the Generation Lifetime and Surface Generation Velocity through Transient Responses of a MOS Structure to a Linear Voltage Sweep
由MOS结构对线性 电压 扫描的瞬态响应测定产生寿命和表面产生速度
The characteristics and function contrast of voltage sweep circuit with constant current transistor charge mode
恒流管充电式 电压 扫描电路的特性及性能比较
[化] 电压扫描