The thin film thickness of SOI Groove gate MOS devices affects the threshold voltage sub-threshold slope and saturation driving current severely . So it 's a very important factor for good device characteristics to optimize the thin film thickness .

仿真结果显示硅膜厚度对SOI槽栅MOS器件的阈值 电压、亚阈值特性和 饱和驱动能力都有较大影响，选择最佳的硅膜厚度是获得较好的器件特性的重要因素。

GaN has larger bandgap breakdown voltage electron saturation velocity which made it have great potential to be applied for high temperature high power and high frequency electronics compared to traditional Si .

GaN作为第三代半导体，和传统的Si相比具有更大的禁带宽度，更高击穿 电场、更高的电子 饱和速度等优点，使得其在高温，高频，大功率等场合具有令人瞩目的应用前景。

When the supplied voltage reached the certain critical voltage the contact angle saturation phenomenon will be appear . The contact angle would not change when the supplied voltage was increased .

当外加电压达到临界 电压时，会出现接触角 饱和现象，然后随电压升高接触角无明显变化。

The best design method of high voltage and low saturation voltage GTR presented in this paper shows that the collector region through design is better than non-through design .

本文提出了 高压低 饱和压降GTR的最佳设计方法。分析表明，高压 低 饱和压降晶体管采用集电区穿通性设计比非穿通性设计有利。

Silicon carbide is an attractive wide band semiconductor material in high-temperature high-frequency high-power and radiation resistant applications due to its excellent physical properties such as high breakdown voltage high thermal conductivity and high saturation electron drift velocity .

碳化硅（SiC）由于其有热导率高 、电子的饱和速度大、击穿 电压高等优点而成为制作高温、高频、大功率和抗辐射器件的极具潜力的宽带隙半导体材料。

Applying the differential equation and boundary condition of the director tilt angle θ the essential characters are discussed which include the threshold voltage and the saturation voltage .

根据θ满足的微分方程和边界条件，研究了液晶盒的基本性质，包括阈值 电压 和 饱和电压。

It can ensure that the controlled system tracks rapidly the reference voltage within the scope of the given saturation voltage while torque pulsation can be attenuated effectively .

数值实验显示该控制器具有很好的普 适性，以及此系统能快速跟踪 额定电压范围内的参考 电压，转矩脉动能被有效抑制。

The experimental results showed that the saturation voltage ranged from 50 to 1000V and a higher collection efficiency was obtained at higher voltage in the saturation area .

结果表明，从50－1000V的范围为饱和区；在 饱和区内工作 电压较高时收集效率高；

The stronger the external field is applied the higher bias voltage is required to reach signal saturation .

发现不同磁场下随偏压升高，样品 电流信号迅速增强并 趋于 饱和；磁场越强，达到 饱和需要的 偏压越高；

On the grounds of the pinch-off voltage the cut-off point of variable resistance area and saturation area can be fixed so the field effect tube can reliably work in the saturation area .

根据夹断 电压能确定可变电阻区与 饱和区的分界点，使场效应管可靠地工作在饱和区的 原理。

With the improvement of transmission capacitance and increasingly high voltage in power system the magnetic saturation and insulation problem of traditional electromagnetic current transformer becomes more serious and thus this does not meet the requirement that the network develops towards automation and digitized direction .

随着近年来电力系统容量的不断增加和 电网 电压 运行 等级的不断提高，传统的电磁式电流互感器的磁 饱和与绝缘难的问题也日益突出，无法适应现代电力系统自动化、数字化的发展要求。

These auxiliary circuits include precision voltage source the working temperature setting circuit the integrating saturation releasing circuit and the display circuit which shows the state of temperature adjustment .

这些辅助电路包括精密 电压源、工作温度点设定电路、积分 饱和释放电路和温度调节状态显示电路等。

In this pager the characteristics of high voltage switching power transistor used in electronics ballast such as breakdown voltage saturation voltage and switching time are introduced .

介绍了用于节能灯照明电路的高耐压功率晶体管的反向击穿 电压、 饱和压降和开关时间等参数的设计要求。

The experimental results for the first time demonstrate that the junction voltage saturation occurs after the junction voltage series resistance ideality factor and junction capacitance simultaneously show step offsets near the threshold .

首次发现，激光二极管的结电压、串联电阻、理想因子和结电容在阈值附近同时出现了明显的阶跃，之后结 电压呈现 饱和。

The paper describes the reason of voltage mutual inductor produced iron-core saturation resonance ( also called ferromagnetic resonance ) .

文章阐述了 电压互感器产生铁芯 饱和谐振（又称铁磁谐振）的原因。

CVT high voltage fuse ; blow ; ferromagnetic resonance ; saturation ; analysis .

CVT 高压熔断器；熔断；铁磁谐振； 饱和；分析。

The experimental results shows that if charged voltage is under-10 kV the charge-to-mass ratio increases with decreasing charged voltage reaches a saturation value at-60 kV charged voltage .

试验发现：当充电电压低于-10kV时，颗粒的荷质比随充电 电压的降低而增加，在-60kV时基本达到 饱和荷电量；

Its first theoretical calculation and analysis sub-threshold current threshold voltage saturation current variation with temperature and the Medici simulation verification .

先对其进行理论上的计算分析，得到亚阈值电流，阈值 电压， 饱和电流等随温度的变化关系，并用Medici模拟仿真进行验证。

The Best Design of High Voltage and Low Saturation Voltage GTR

高压低 饱和压降GTR最佳设计

The present paper covers the junction voltage saturation characteristic of the semiconductor lasers and the experimental result about the relation between reliability and junction voltage saturation characteristic in the semiconductor lasers .

本文讨论了半导体激光器的结 电压 饱和特性，并给出了其可靠性和结电压饱和特性关系的实验结果。

According to the simulation with the self-heating effect the threshold voltage was reduced the leakage current was increased the sub-threshold voltage slope was added and the drain current continues to increase in the saturation region .

由模拟可知，薄膜晶体管的自加热效应使其阈值电压降低、漏电流增大、亚 阈值斜率 变大、漏电流在 饱和区出现继续增大的现象。

Middle impedance bus differential protection is widely used in high voltage power network for its simple structure fast response TA saturation resistant and etc. It is practical to understand its behavior for setting commissioning operation and fault analysis .

中阻母差以结构简单、动作快速、抗TA（电流互感器） 饱和等特点，在 高压电网中得到广泛应用，掌握其动作行为对整定、调试、运行、事故分析有一定的实际意义。

By adopting resistance divider voltage sensor designed in this topic has no ferromagnetic resonance overcome saturation has no load sharing and is permitted to short and cutoff in circuit so it has high reliability .

本课题所研究的 电压传感器采用电阻分压器原理，不存在铁磁谐振，克服了 铁心 饱和，不再有负荷分担，短路和开路都是允许的，具有高的可靠性。

Junction Voltage Saturation Characteristic and Reliability in the Semiconductor Lasers

半导体激光器结 电压 饱和特性及其与器件可靠性的关系

The third-order difference is used as a trigger . The ratio of CT secondary induced voltage is used to determine the saturation .

该措施将 电流 互感 器（CT）二次 电流的三阶差分作为触发单元，以CT二次感应 电压的比值最终判定 饱和的发生与 结束。

As the third generation semiconductor material GaN takes advantages form bigger forbidden band width higher breakdown voltage higher thermal conductivity and higher electronic saturation speed which are suitable for high temperature power applications .

GaN作为第三代半导体材料，具有禁带宽度大、 击穿场强高、热导率高以及电子 饱和速度高等特点，广泛应用于高温、高频和大功率等领域。

Therefore the over-voltage caused by the electromagnetic voltage transformer saturation in the system with insulated neutral belongs to shifting over-voltage .

故可得出结论：在中性点绝缘系统中，因电磁式 电压互感器 饱和引起的过电压现象属于工频位移过电压。

This technology exhibits bright prospect in photoelectricity field due to its advantages of low DC drive voltage active luminescence excellent hue saturation wide visual angle etc.

它具有 低压直流驱动、主动发光、色彩 饱和度好、视角宽等一系列优点，在照明光源、光电耦合器和平板显示等光电领域具有诱人的前景。