Considering surface recombination the theoretical model was proposed to simulate diffusion process .

考虑到 表面 复合，我们提出了一个理论模型来进行模拟载流子的扩散过程。

The effective surface recombination velocity at the interface of diffused n + n high-low junction in solar cells

太阳电池扩散N~+N高低结界面的有效 表面 复合速度

The former equation expresses the spectral response of the solar cells at short wavelengths and the latter equation expresses the saturation of the surface recombination at high a values .

前式反映了电池短波长光谱响应，后式反映了 α值 继续 升高时， 表面 复合饱和现象。

The Theoretical Analyzation and Calculation About the Effects of Grain Size Thickness and Back Surface Recombination Velocity on the Performances of Poly Si Thin Film MIS Schottky Solar Cells

晶粒度、厚度和背 表面 复合速度对MISSchottky势垒多晶Si薄膜太阳电池性能影响的理论分析和计算

Measurements on surface recombination velocities of silicon by means of thin Au-Si surface barrier detectors

用薄型金-硅面垒探测器测定硅的 表面 复合速度

A method for the extraction of diffusion length and surface recombination velocity of gap from EBIC line scan

EBIC测定GaP的少子扩散长度和 表面 复合速度

From the experiment results and the normalization results the surface recombination velocities of silicon pn junction were obtained .

通过测量结果和计算结果的归一化比较，获得了其 表面 复合速率。

Study on Surface Recombination Velocity and Diffusion Length in Semiconductors by Microwave Photoconductivity Spectrum

用微波光电导谱研究半导体薄片的少子扩散长度和 表面 复合速度

The Solution and Application of Minority Carrier Continuity Equation for a Semiconductor Wafer with Different Surface Recombination Velocity

有相异 表面 复合速度时半导体薄片少子连续方程的解及应用

The surface states play two different roles for the photoinduced carriers one is surface recombination center the other is surface active centers .

荧光光谱研究表明TiO2的表面态起着两种不同作用，一为 表面 复合中心，二为光催化反应活性中心。

From above equations it is clear that in order to reduce the influence of the surface recombination and raise the efficiency the W value of the width of the top region must be reduced and the mobility of the material must be raised .

据此，为要减少 表面 复合影响，提高效率，必须减小顶区宽度W，增加材料迁移率。

Simultaneously defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity .

同时芯片表面钝化层内的缺陷数目也在温度作用下增加，引起芯片 表面 复合速度增加。

Deuterium diffusion and surface recombination behaviour in titanium deuteride

氘化钛中氘扩散和 表面 复合行为研究

An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity which affect the final output of the solar cell .

我们又进一步研究了退火对少数载流子寿命和 表面 复合速率的影响，因为其对太阳能电池的最终效率影响很大。

The Effect of Surface Recombination on Photocurrent in Semiconductor

表面 复合 作用对半导体光电流的影响

A numerical method is used to study the function relationships of the open-circuit voltage of induced-junction solar cells with substrate doping charges in the insulator layer and surface recombination velocity .

本文应用数值计算方法研究了感应反型层太阳电池的开路电压与衬底掺杂水平、介质层固定正电荷密度及 表面 复合速度等的函数关系。

Effects of Surface Recombination Velocity and Junction Depth on the Performance of n ~ + - p Diffused Junction Silicon Solar Cells

表面 复合速度和结深对硅扩散n~+-p结太阳电池性能的影响

This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination .

并使用连续性方程，在考虑 表面 复合 过程的情况下，提出了短二极管的少子寿命计算公式。

Using the lumped surface effects model based on Spicer 's unified effect model two-dimensional numerical simulation on AlGaAs / GaAs HBT has been performed to investigate the effects of both surface Fermi level pinning and surface recombination on the current gain of the device .

采用表面效应集总模型综合考虑表面费米能级钉扎和 表面 复合效应，对AlGaAs／GaAsHBT表面效应的影响进行了二维数值模拟。

After the ultraviolet irradiation it is observed that the surface recombination velocity and the sample resistance are increased the bulk minority lifetime is decreased .

紫外辐照使 碲镉汞样品的电阻明显增大，样品的 表面 复合速度上升，少 子体寿命下降。说明紫外辐射不仅对 碲镉汞样品的 表面有影响，而且对 碲镉汞体内也有影响。

Application of Photovoltaic Method to Determination of the Surface Recombination Velocity : N type GaAs

N型GaAs单晶 表面 复合速度的宽谱光伏测算

The influences of p-n junction depth ( thickness of p-GaAs layer ) velocity of surface recombination and diffusion length of separate layers on behavious of solar cells are also discussed .

本文还讨论了窗口层厚度、Al组分、p-n结结深、 表面 复合速度和扩散长度对电池性能的影响。

Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity .

钝化机理研究获得了 表面 复合对不同 表面 掺杂 浓度晶体硅太阳电池性能的影响、表面和界面复合速度的理论表达式；

The full aluminum back surface field is adopted which really improves the collecting efficiency of the carriers lowers the the back surface recombination and improves the fill factor and the efficiency of the solar cell .

对电阻率较高的材料来说，采用全铝背面电场的确能提高载流子的收集率，降低背 表面 的 少于 复合，从而提高太阳电池的填充因子和转换效率。

LOSS AND GAIN It is shown that the surface recombination in the extrinsic base degrades the current gain significantly .

结果表明， 表面 态的存在对 集电极电流几乎不产生影响，但显著增加基极电流，使得电流增益明显下降。

Effective Surface passivation which is needed to reduce the surface states and the minority carrier loss by surface recombination has become one of the key steps in fabrication of black silicon solar cells .

为了减少黑硅的表面态，需要对其进行有效钝化，在黑硅 表面生长 钝化层是同时减少单晶硅太阳电池光学和电学损失，提高电池 效率的关键。

It was found that the role of the high order modes can be considerably minimized by using penetrating light sample of large size and low surface recombination velocity . The bulk lifetime of the filament can than be more accurately determined .

在测量时使用贯穿光、大尺寸样品、及使样品 表面 复合速度较低时，高次模的作用可以减少，因而能准确测得体寿命。

This is because the rate of the surface recombination of the sample is greater than the rate in the bulk ;

因为在现在测试的样品中，在 表面 的 载流子 复合速率大于在体内的。

As to the emission mechanism of Si-based material many models have been proposed for example the quantum ( size ) confinement effect model the surface recombination center model and the quantum confinement-surface recombination model .

关于硅基发光的机制，人们曾提出很多模型，如量子（尺寸）限制效应模型、 表面 复合模型以及秦国刚等人提出的量子限制效应&表面复合模型等。