AIN has been grown under the lower growth rate of1nm / min. The SEM result shows that the morphology of the sample becomes much smooth and the unfilmed area disappears . This finding can be used as a basis for future research .

在1nm/min的低生长速度下外延生长了A1N薄膜，SEM结果显示在这个生长速度下获得的样品的表面更加光滑平整，不存在 未成 膜 的 凹陷区域，这个发现可以作为以后研究的基础。

The concepts of nuclear stopping power electronic stopping power and average range were also introduced the micrographs of unfilmed MCP and MCPs filmed with different thicknesses were shown .

给出了 三 代微光 像 管中微通道板 离子 壁垒 膜对入射正 离子阻止作用的描述，引进了核阻止本领、电子阻止 本领和平均射程的概念。